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products and specifications discussed herein ar e subject to change by micron without notice. 256mb: x4, x8, x16 ddr sdram features pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d1.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 1 ?2003 micron technology, inc. all rights reserved. double data rate (ddr) sdram mt46v64m4 ? 16 meg x 4 x 4 banks mt46v32m8 ? 8 meg x 8 x 4 banks mt46v16m16 ? 4 meg x 16 x 4 banks features ?v dd = +2.5v 0.2v, v dd q = +2.5v 0.2v ?v dd = +2.6v 0.1v, v dd q = +2.6v 0.1v (ddr400) ? bidirectional data strobe (dqs) transmitted/ received with data, that is, source-synchronous data capture (x16 has two ? one per byte) ? internal, pipelined do uble-data-rate (ddr) architecture; two data accesses per clock cycle ? differential clock inputs (ck and ck#) ? commands entered on each positive ck edge ? dqs edge-aligned with data for reads; center- aligned with data for writes ? dll to align dq and dqs transitions with ck ? four internal banks for concurrent operation ? data mask (dm) for masking write data (x16 has two ? one per byte) ? programmable burst lengths (bl): 2, 4, or 8 ?auto refresh ? 64ms, 8192-cycle(commercial & industrial) ? 16ms, 8192-cycle (automotive) ? self refresh (not available on at devices) ? longer-lead tsop for improved reliability (ocpl) ? 2.5v i/o (sstl_2-compatible) ? concurrent auto precharge option supported ? t ras lockout supported ( t rap = t rcd) notes: 1. only available on revision f and g. 2. only available on revision k. 3. not recommended for new designs. 4. contact micron for availability. options marking ? configuration ? 64 meg x 4 (16 meg x 4 x 4 banks) 64m4 ? 32 meg x 8 (8 meg x 8 x 4 banks) 32m8 ? 16 meg x 16 (4 meg x 16 x 4 banks) 16m16 ?plastic package ? ocpl ? 66-pin tsop tg ? 66-pin tsop (pb-free) p ?plastic package ? 60-ball fbga (8mm x 14mm) fg 1 ? 60-ball fbga (8mm x 14mm) (pb-free) bg 1 ? 60-ball fbga (8mm x 12.5mm) cv 2 ? 60-ball fbga (8mm x 12.5mm) (pb-free) cy 2 ? timing ? cycle time ? 5ns @ cl = 3 (ddr400b) -5b ? 6ns @ cl = 2.5 (ddr333) fbga only -6 ? 6ns @ cl = 2.5 (ddr333) tsop only -6t ? 7.5ns @ cl = 2 (ddr266) -75e 1 ? 7.5ns @ cl = 2 (ddr266a) -75z 1 ? 7.5ns @ cl = 2.5 (ddr266b) -75 1 ? self refresh ? standard none ? low-power self refresh l ? temperature rating ? commercial (0 c to +70 c) none ? industrial (?40 c to +85 c) it ? automotive (?40 c to +105 c) at 4 ? revision ? x4, x8 :g 3 ? x16 :f 3 ? x4, x8, x16 :k
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d1.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 2 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram features notes: 1. the -5b device is backward compatible with all slower speed grades. the voltage range of -5b device operating at slower speed grades is v dd = v dd q = 2.5v 0.2v. table 1: key timing parameters cl = cas (read) latency; min clock ra te with 50% duty cycle at cl = 2 (-7 5e, -75z), cl = 2.5 (-6, -6t, -75), and cl = 3 (-5b) speed grade clock rate (mhz) data-out window access window dqs?dq skew cl = 2 cl = 2.5 cl = 3 -5b 133 167 200 1.6ns 0.70ns +0.40ns -6 133 167 n/a 2.1ns 0.70ns +0.40ns 6t 133 167 n/a 2.0ns 0.70ns +0.45ns -75e/-75z 133 133 n/a 2.5ns 0.75ns +0.50ns -75 100 133 n/a 2.5ns 0.75ns +0.50ns table 2: addressing parameter 64 meg x 4 32 meg x 8 16 meg x 16 configuration 16 meg x 4 x 4 banks 8 meg x 8 x 4 banks 4 meg x 16 x 4 banks refresh count 8k 8k 8k row address 8k (a0?a12) 8k (a0?a12) 8k (a0?a12) bank address 4 (ba0, ba1) 4 (ba0, ba1) 4 (ba0, ba1) column address 2k (a0?a9, a11) 1k (a0?a9) 512 (a0?a8) table 3: speed grade compatibility marking pc3200 (3-3-3) pc2700 (2.5-3-3) pc2100 (2-2-2) pc2100 (2-3-3) pc2100 (2.5-3-3) pc1600(2-2-2) -5b 1 yes yes yes yes yes yes -6 ? yes yes yes yes yes -6t ? yes yes yes yes yes -75e ? ? yes yes yes yes -75z ? ? ? yes yes yes -75 ????yesyes -5b -6/-6t -75e -75z -75 -75
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d1.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 3 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram features figure 1: 256mb ddr sdram part numbers fbga part marking system due to space limitations, fbga-packaged components have an abbreviated part marking that is different from the part number. for a quick conversion of an fbga code, see the fbga part marking decoder on micron?s web site: www.micron.com . example part number: mt46v16m16p-6t:f l special options standard low power configuration 64 meg x 4 32 meg x 8 16 meg x 16 64m4 32m8 16m16 package 400-mil tsop 400-mil tsop (pb-free) 8mm x 14mm fbga 8mm x 14mm fbga (pb-free) tg p fg bg speed grade t ck = 5ns, cl = 3 t ck = 6ns, cl = 2.5 t ck = 6ns, cl = 2.5 t ck = 7.5ns, cl = 2 t ck = 7.5ns, cl = 2 t ck = 7.5ns, cl = 2.5 -5b -6 -6t -75e -75z -75 it at operating temp. commercial industrial automotive - configuration mt46v package speed : revision sp. op. temp. revision x16 x4, x8 x4, x8, x16 :f :g :k 8mm x 12.5mm fbga 8mm x 12.5mm fbga (pb-free) cv cy
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddrtoc.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 4 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram table of contents table of contents state diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 general notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 automotive tempature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 functional block diagrams. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 pin and ball assignments and descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 electrical specifications ? dc and ac. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37 commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .45 deselect . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49 no operation (nop). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49 load mode register (lmr) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49 active (act) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50 read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51 write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52 precharge (pre) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53 burst terminate (bst) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53 auto refresh (ar). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53 self refresh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53 operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54 initialization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54 register definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .57 active . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .61 read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .62 write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .74 precharge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .87 auto refresh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .89 self refresh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .90 power-down (cke not active) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .92
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core1.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 4 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram state diagram state diagram figure 2: simplified state diagram note: this diagram represents operations within a single bank only and does not capture concur- rent operations in other banks. power on power applie d ref s lmr refa ref s x a c t c ke low c kel c ke hi g h c keh pre pre c har g e all b anks mr emr s elf refresh i d le all b anks pre c har g e d row a c tive burst stop rea d rea d a automati c sequen c e c omman d sequen c e write write write write a write a pre c har g e preall a c tive power- d own pre c har g e power- d own auto refresh pre write a read a read a pre pre read a read read read b s t a c t = a c tive b s t = bur s t terminate c keh = exit power- d own c kel = enter power- d own emr = exten d e d mo d e re g ister lmr = load mode re g i s ter mr = mo d e re g ister pre = pre c har g e preall = pre c har g e all b anks read a = read with auto pre c har g e refa = auto refre s h ref s = enter self refresh ref s x = exit self refresh write a = write with auto pre c har g e pre lmr
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core1.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 5 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram functional description functional description the ddr sdram uses a double data rate arch itecture to achieve high-speed operation. the double data rate architecture is essentially a 2 n -prefetch architecture with an inter- face designed to transfer two data words per clock cycle at the i/o pins. a single read or write access for the ddr sdram effectively consists of a single 2 n -bit-wide, one-clock- cycle data transfer at the internal dram core and two corresponding n -bit-wide, one- half-clock-cycle data transfers at the i/o pins. a bidirectional data strobe (dqs) is transmitted externally, along with data, for use in data capture at the receiver. dqs is a strobe transmitted by the ddr sdram during reads and by the memory controller during writes. dqs is edge-aligned with data for reads and center-aligned with data for writ es. the x16 offering has two data strobes, one for the lower byte and one for the upper byte. the ddr sdram operates from a differential clock (ck and ck#); the crossing of ck going high and ck# going low will be referred to as the positive edge of ck. commands (address and control signals) are registered at every positive edge of ck. input data is registered on both edges of dq s, and output data is referenced to both edges of dqs, as well as to both edges of ck. read and write accesses to the ddr sdra m are burst oriented; accesses start at a selected location and continue for a prog rammed number of locations in a programmed sequence. accesses begin with the registrati on of an active command, which may then be followed by a read or write command. the address bits registered coincident with the active command are used to select the bank and row to be accessed. the address bits registered coincident with the read or write command are used to select the bank and the starting column location for the burst access. the ddr sdram provides for programmable read or write burst lengths of 2, 4, or 8 locations. an auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. as with standard sdr sdrams, the pipeline d, multibank architec ture of ddr sdrams allows for concurrent operation, thereby pr oviding high effective bandwidth by hiding row precharge and activation time. an auto refresh mode is provided, along with a power-saving power-down mode. all inputs are compatible with the jedec standard for sstl_2. all full-drive option outputs are sstl_2, class ii compatible. general notes ? the functionality and the timi ng specifications discussed in this data sheet are for the dll-enabled mode of operation. ? throughout the data sheet, the various figures and text refer to dqs as ?dq.? the dq term is to be interpreted as any and all dq collectively, unless specifically stated otherwise. additionally, the x16 is divided into two bytes, the lower byte and upper byte. for the lower byte (dq0?dq7) dm refe rs to ldm and dqs refers to ldqs. for the upper byte (dq8?dq15) dm refers to udm and dqs refers to udqs. ? complete functionality is described thro ughout the document and any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements. ? any specific requirement takes precedence over a general statement.
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core1.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 6 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram functional description automotive tempature the automotive temperature (at) option adheres to the following specifications: ? 16ms refresh rate ? self refresh not supported ? ambient and case temperatur es cannot be less than ?40 c or greater than +105 c
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 8 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram functional block diagrams functional block diagrams the 256mb ddr sdram is a high-speed cmos, dynamic random-access memory containing 268,435,456 bits. it is internally configured as a 4-bank dram. figure 3: 64 meg x 4 functional block diagram 13 ras# cas# row- address mux ck cs# we# ck# 11 a0?a12, ba0, ba1 cke 13 15 1024 (x8) 8192 8192 15 13 10 1 2 2 4 4 4 1 1 1 1 1 1 8 8 2 8 ck out dqs ck ck in mux 4 4 4 4 4 8 dq0?dq3 dqs dm 1 write fifo and drivers control logic mode registers command decode refresh counter address register bank control logic column- address counter/ latch column decoder i/o gating dm mask logic bank 0 row- address latch and decoder bank 0 memory array (8,192 x 1,024 x 8) sense amplifiers bank 1 bank 2 bank 3 read latch data ck dll drivers dqs generator input registers rcvrs data mask column 0 column 0
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 9 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram functional block diagrams figure 4: 32 meg x 8 functional block diagram figure 5: 16 meg x 16 functional block diagram 13 ras# cas# row- address mux ck cs# we# ck# control logic column- address counter/ latch mode registers 10 command decode a0?a12, ba0, ba1 cke 13 address register 15 512 (x16) 8192 i/o gating dm mask logic column decoder bank0 memory array (8192 x 512 x 16) bank0 row- address latch & decoder 8192 sense amplifiers bank control logic 15 bank1 bank2 bank3 13 9 2 2 refresh counter 8 8 8 1 input registers 1 1 1 1 rcvrs 1 16 16 2 16 ck out data dqs mask data ck ck ck in drvrs dll mux dqs generator 8 8 8 8 8 16 dq0?dq7 dqs 1 read latch write fifo & drivers 1 col0 col0 dm 13 ras# cas# row- address mux ck cs# we# ck# control logic column- address counter/ latch mode registers 9 command decode a0?a12, ba0, ba1 cke 13 address register 15 256 (x32) 8192 i/o gating dm mask logic column decoder bank0 memory array (8,192 x 256 x 32) bank0 row- address latch & decoder 8192 sense amplifiers bank control logic 15 bank1 bank2 bank3 13 8 2 2 refresh counter 16 16 16 2 input registers 2 2 2 2 rcvrs 2 32 32 4 32 ck out data dqs mask data ck ck ck in drvrs dll mux dqs generator 16 16 16 16 16 32 dq0?dq15 ldqs udqs 2 read latch write fifo & drivers 1 col0 col0 ldm, udm
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 10 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram pin and ball assignme nts and descriptions pin and ball assignments and descriptions figure 6: 66-pin tsop pin assignments (top view) x4 x16 x4 x8 x16 v ss dq15 v ss q dq14 dq13 v dd q dq12 dq11 v ss q dq10 dq9 v dd q dq8 nc v ss q udqs dnu v ref v ss udm ck# ck cke nc a12 a11 a9 a8 a7 a6 a5 a4 v ss v ss dq7 v ss q nc dq6 v dd q nc dq5 v ss q nc dq4 v dd q nc nc v ss q dqs dnu v ref v ss dm ck# ck cke nc a12 a11 a9 a8 a7 a6 a5 a4 v ss v ss nf v ss q nc dq3 v dd q nc nf v ss q nc dq2 v dd q nc nc v ss q dqs dnu v ref v ss dm ck# ck cke nc a12 a11 a9 a8 a7 a6 a5 a4 v ss 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 v dd dq0 v dd q dq1 dq2 v ss q dq3 dq4 v dd q dq5 dq6 v ss q dq7 nc v dd q ldqs nc v dd dnu ldm we# cas# ras# cs# nc ba0 ba1 a10/ap a0 a1 a2 a3 v dd x8 v dd dq0 v dd q nc dq1 v ss q nc dq2 v dd q nc dq3 v ss q nc nc v dd q nc nc v dd dnu nc we# cas# ras# cs# nc ba0 ba1 a10/ap a0 a1 a2 a3 v dd v dd nf v dd q nc dq0 v ss q nc nf v dd q nc dq1 v ss q nc nc v dd q nc nc v dd dnu nc we# cas# ras# cs# nc ba0 ba1 a10/ap a0 a1 a2 a3 v dd
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 11 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram pin and ball assignme nts and descriptions figure 7: 60-ball fbga ball assignments (top view) v ss q dq14 dq12 dq10 dq8 v ref dq15 v dd q v ss q v dd q v ss q v ss ck a12 a11 a8 a6 a4 v ss dq13 dq11 dq9 udqs udm ck# cke a9 a7 a5 v ss v dd dq2 dq4 dq6 ldqs ldm we# ras# ba1 a0 a2 v dd dq0 v ss q v dd q v ss q v dd q v dd cas# cs# ba0 a10 a1 a3 v dd q dq1 dq3 dq5 dq7 dnu x16 (top view) v ss q nc nc nc nc v ref nf v dd q v ss q v dd q v ss q v ss ck a12 a11 a8 a6 a4 v ss dq3 nf dq2 dqs dm ck# cke a9 a7 a5 v ss v dd dq0 nf dq1 nc nc we# ras# ba1 a0 a2 v dd nf v ss q v dd q v ss q v dd q v dd cas# cs# ba0 a10 a1 a3 v dd q nc nc nc nc dnu x4 (top view) v ss q nc nc nc nc v ref dq7 v dd q v ss q v dd q v ss q v ss ck a12 a11 a8 a6 a4 v ss dq6 dq5 dq4 dqs dm ck# cke a9 a7 a5 v ss v dd dq1 dq2 dq3 nc nc we# ras# ba1 a0 a2 v dd dq0 v ss q v dd q v ss q v dd q v dd cas# cs# ba0 a10 a1 a3 v dd q nc nc nc nc dnu x8 (top view) a 1 2 3 4 5 6 7 8 9 b c d e f g h j k l m a 1 2 3 4 5 6 7 8 9 b c d e f g h j k l m a 1 2 3 4 5 6 7 8 9 b c d e f g h j k l m
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 12 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram pin and ball assignme nts and descriptions table 4: pin and ball descriptions fbga numbers tsop numbers symbol type description k7, l8, l7, m8, m2, l3, l2, k3, k2, j3, k8, j2, h2 29, 30, 31, 32, 35, 36, 37, 38, 39, 40, 28 41, 42 a0, a1, a2, a3, a4, a5, a6, a7, a8, a9, a10, a11, a12 input address inputs: provide the row addres s for active commands, and the column address and auto precharge bit (a10) for read/ write commands, to select one loca tion out of the memory array in the respective bank. a10 samp led during a precharge command determines whether the precharg e applies to one bank (a10 low, bank selected by ba0, ba 1) or all banks (a10 high). the address inputs also provide the op-code during a load mode register command. j8, j7 26, 27 ba0, ba1 input bank address inputs: ba0 and ba1 define to which bank an active, read, write, or precharge command is being applied. ba0 and ba1 also define which mode register (mode register or extended mode register) is loaded during the load mode register (lmr) command. g2, g3 45, 46 ck, ck# input clock: ck and ck# are differential clock inputs. all address and control input signals are sampled on the crossing of the positive edge of ck and the negative edge of ck#. output data (dq and dqs) is referenced to th e crossings of ck and ck#. h3 44 cke input clock enable: cke high activates and cke low deactivates the internal clock, input buffers, and output drivers. taking cke low provides precharge power-down and self refresh operations (all banks idle) or active power-down (row active in any bank). cke is synchronous for power-down entry and exit and for self refresh entry. cke is asynchrono us for self refresh exit and for disabling the outputs. cke must be maintained high throughout read and write accesses. input buffers (excluding ck, ck#, and cke) are disabled during power- down. input buffers (excluding cke) are disabled during self refresh. cke is an sstl_2 input but will detect an lvcmos low level after v dd is applied and until cke is first brought high, after which it becomes a sstl_2 input only. h8 24 cs# input chip select: cs# enables (registered low) and disables (registered high) the command decoder. all commands are masked when cs# is registered high. cs# provides for external bank selection on systems with multiple banks. cs# is considered part of the command code. f3 f7, f3 47 20, 47 dm ldm, udm input input data mask: dm is an input mask signal for write data. input data is masked when dm is sa mpled high along with that input data during a write access. dm is sampled on both edges of dqs. although dm pins are input-only, the dm loading is designed to match that of dq and dqs pins. for the x16, ldm is dm for dq0? dq7 and udm is dm for dq8?dq15. pin 20 is a nc on x4 and x8. h7, g8, g7 23, 22, 21 ras#, cas#, we# input command inputs: ras#, cas#, and we# (along with cs#) define the command being entered. a8, b9, b7, c9, c7, d9, d7, e9, e1, d3, d1, c3, c1, b3, b1, a2 2, 4, 5, 7, 8, 10, 11, 13, 54, 56, 57, 59, 60, 62, 63, 65 dq0?dq2 dq3?dq5 dq6?dq8 dq9?dq11 dq12?dq14 dq15 i/o data input/output: data bus for x16. a8, b7, c7, d7, d3, c3, b3, a2 2, 5, 8, 11, 56, 59, 62, 65 dq0?dq2 dq3?dq5 dq6, dq7 i/o data input/output: data bus for x8.
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 13 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram pin and ball assignme nts and descriptions b7, d7, d3, b3 5, 11, 56, 62 dq0?dq2 dq3 i/o data input/output: data bus for x4. e3 e7 e3 51 16 51 dqs ldqs udqs i/o data strobe: output with read data, inpu t with write data. dqs is edge-aligned with read data, centered in write data. it is used to capture data. for the x16, ldqs is dqs for dq0?dq7 and udqs is dqs for dq8?dq15. pin 16 (e7) is nc on x4 and x8. f8, m7, a7 1, 18, 33 v dd supply power supply. b2, d2, c8, e8, a9 3, 9, 15, 55, 61 v dd q supply dq power supply: isolated on the die for improved noise immunity. a3, f2, m3 34, 48, 66 v ss supply ground. a1, c2, e2, b8, d8 6, 12, 52, 58, 64 v ss q supply dq ground: isolated on the die for improved noise immunity. f1 49 v ref supply sstl_2 reference voltage. ? 14, 17, 25, 43, 53 nc ? no connect for x16: these pins should be left unconnected. b1, b9, c1, c9, d1, d9, e1, e7, e9, f7 4, 7, 10, 13, 14, 16, 17, 20, 25, 43, 53, 54, 57, 60, 63 nc ? no connect for x8: these pins should be left unconnected. b1, b9, c1, c9, d1, d9, e1, e7, e9, f7, 4, 7, 10, 13, 14, 16, 17, 20, 25, 43, 53, 54, 57, 60, 63 nc ? no connect for x4: these pins should be left unconnected. a2, a8, c3, c7 2, 8, 59, 65 nf ? no function for x4: these pins should be left unconnected. f9 19, 50 dnu ? do not use: must float to minimize noise on v ref . table 5: reserved nc pin descriptions nc pins not listed may also be reserved for othe r uses; this table define s nc pins of importance tsop numbers symbol type description 17 a13 input address input a13 for 1gb devices. table 4: pin and ball descriptions (continued) fbga numbers tsop numbers symbol type description
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 14 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram package dimensions package dimensions figure 8: 66-pin plastic tsop (400 mil) notes: 1. all dimensions in millimeters. 2. package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side. see detail a 0.10 0.65 typ 0.71 10.16 0.08 0.15 0.50 0.10 pin #1 id detail a 22.22 0.08 0.32 0.075 typ +0.03 ?0.02 +0.10 ?0.05 1.20 max 0.10 0.25 0.80 typ 0.10 (2x) gage plane 11.76 0.20
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 15 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram package dimensions figure 9: 60-ball fbga (8mm x 14mm) 1 notes: 1. package only available in die revision f and g. 2. all dimensions are in millimeters. 3. topside part marking decoder can be found on micron?s web site. ball a1 id 14 0.15 ball a1 id 1 typ 0.8 typ 8 0.15 9 8 7 a b c d e f g h j k l m 3 2 1 0.85 0.1 seating plane a 11 ctr 6.4 ctr 0.12 a 60x ?0.45 solder ball material: sac305. dimensions apply to solder balls post- reflow on ?0.33 nsmd ball pads. 1.2 max 0.25 min
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 16 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram package dimensions figure 10: 60-ball fbga (8mm x 12.5mm) 1 notes: 1. package only available in die revision k. 2. all dimensions are in millimeters. 3. topside part marking decoder can be found on micron?s web site. ball a1 id 1.20 max 8 0.15 ball a1 id 60x ?0.45 solder ball material: eutectic or sac305. dimensions apply to solder balls post- reflow on ?0.33 nsmd ball pads. 1 typ 11 ctr 12.5 0.15 0.8 0.1 0.12 a a seating plane 6.4 ctr 0.8 typ 0.25 min 9 8 7 3 2 1 a b c d e f g h j k l m
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 17 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specifications ? i dd electrical specifications ? i dd table 6: i dd specifications and conditions (x4, x8: -5b, -6, -6t, -75e, -7z, -75) - die revision f only v dd q = +2.6v 0.1v, v dd = +2.6v 0.1v (-5b); v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v (-6, -6 t, -75e, -7z, -75); 0c t a +70c; notes: 1?5, 11, 13, 15 , 47; notes appear on pages 35? 40; see also table 9 on page 18 parameter/condition symbol -5b -6/6t -75e -75z -75 units notes operating one-bank precharge current: t rc = t rc (min); t ck = t ck (min); dq, dm, and dqs inputs changing once per clock cycle; address and control inputs changing once every two clock cycles i dd 0 135 125 125 120 120 ma 23, 48 operating one-bank active -read-precharge current: burst = 4; t rc = t rc (min); t ck = t ck (min); i out =0ma; address and control inputs changing once per clock cycle i dd 1 170 170 160 145 145 ma 23, 48 precharge power-down standby current: all banks idle; power-down mode; t ck = t ck (min); cke = low i dd 2p44444ma24, 33 idle standby current: cs# = high; all banks are idle; t ck = t ck (min); cke = high; address and other control inputs changing once per clock cycle; v in =v ref for dq, dqs, and dm i dd 2f 60 50 45 45 45 ma 51 active power-down standby current: one bank active; power-down mode; t ck = t ck (min); cke = low i dd 3p 40 30 25 25 30 ma 24, 33 active standby current: cs# = high; cke = high; one bank active; t rc = t ras (max); t ck = t ck (min); dq, dm, and dqs inputs changing twice per cl ock cycle; address and other control inputs changing once per clock cycle i dd 3n 70 60 50 50 50 ma 23 operating burst read current: burst = 2; continuous burst reads; one bank active ; address and control inputs changing once per clock cycle; t ck = t ck (min); i out =0ma i dd 4r 200 175 150 150 150 ma 23, 48 operating burst write current: burst = 2; continuous burst writes; one bank active; addres s and control inputs changing once per clock cycle; t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle i dd 4w 195 175 150 150 150 ma 23 auto refresh burst current: t refc = t rfc (min) i dd 5 260 255 235 235 245 ma 50 t refc =7.8s i dd 5a66666ma28, 50 self refresh current: cke 0.2v standard i dd 644444ma 12 low power (l) i dd 6a22222ma 12 operating bank interleave read current: four-bank interleaving reads (burst = 4 ) with auto precharge; t rc = minimum t rc allowed; t ck = t ck (min); address and control inputs change only during active, read, or write commands i dd 7 470 410 350 350 365 ma 23, 49
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 18 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specifications ? i dd table 7: i dd specifications and conditions (x16: -5b, -6, -6t, -75e, -75z, -75) - die revision g only v dd q = +2.6v 0.1v, v dd = +2.6v 0.1v (-5b); v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v (-6, -6 t, -75e, -7z, -75); 0c t a +70c; notes: 1?5, 11, 13, 15 , 47; notes appear on pages 35? 40; see also table 9 on page 18 parameter/condition symbol -5b -6/6t -75e -75z -75 units notes operating one-bank precharge current: t rc = t rc (min); t ck = t ck (min); dq, dm, and dqs inputs changing once per clock cycle; address and control inputs changing once every two clock cycles i dd 0 135 125 125 120 120 ma 23, 48 operating one-bank active -read-precharge current: burst = 4; t rc = t rc (min); t ck = t ck (min); i out =0ma; address and control inputs changing once per clock cycle i dd 1 185 180 170 155 155 ma 23, 48 precharge power-down standby current: all banks idle; power-down mode; t ck = t ck (min); cke = low i dd 2p44444ma24, 33 idle standby current: cs# = high; all banks are idle; t ck = t ck (min); cke = high; address and other control inputs changing once per clock cycle; v in =v ref for dq, dqs, and dm i dd 2f 60 50 45 45 45 ma 51 active power-down standby current: one bank active; power-down mode; t ck = t ck (min); cke = low i dd 3p 40 30 25 25 30 ma 24, 33 active standby current: cs# = high; cke = high; one bank active; t rc = t ras (max); t ck = t ck (min); dq, dm, and dqs inputs changing twice per cl ock cycle; address and other control inputs changing once per clock cycle i dd 3n 70 60 50 50 50 ma 23 operating burst read current: burst = 2; continuous burst reads; one bank active ; address and control inputs changing once per clock cycle; t ck = t ck (min); i out =0ma i dd 4r 260 220 185 185 185 ma 23, 48 operating burst write current: burst = 2; continuous burst writes; one bank active; addres s and control inputs changing once per clock cycle; t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle i dd 4w 215 195 160 160 160 ma 23 auto refresh burst current: t refc = t rfc (min) i dd 5 260 255 235 235 245 ma 50 t refc = 7.8s i dd 5a66666ma28, 50 self refresh current: cke 0.2v standard i dd 644444ma 12 low power (l) i dd 6a22222ma 12 operating bank interleave read current: four-bank interleaving reads (burst = 4 ) with auto precharge; t rc = minimum t rc allowed; t ck = t ck (min); address and control inputs change only during active, read, or write commands i dd 7 510 440 380 380 400 ma 23, 49
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. 256mb_ddr_x4x8x16_d2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 19 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specifications ? i dd table 8: i dd specifications and conditions (x4, x8, x16: -5b, -6, -6t) - die revision k only v dd q = +2.6v 0.1v, v dd = +2.6v 0.1v (-5b); v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v (-6, -6t); 0c t a +70c; notes: 1?5, 11, 13, 15 , 47; notes appear on pages 35? 40; see also table 9 on page 18 parameter/condition symbol -5b -6/6t units notes operating one-bank precharge current: t rc = t rc (min); t ck = t ck (min); dq, dm, and dqs inputs changing once per clock cycle; address and control inputs changing once every two clock cycles i dd 0 100 90 ma 23, 48 operating one-bank active -read-precharge current: burst = 4; t rc = t rc (min); t ck = t ck (min); i out = 0ma; address and control inputs changing once per clock cycle i dd 1 120 115 ma 23, 48 precharge power-down standby current: all banks idle; power- down mode; t ck = t ck (min); cke = low i dd 2p 4 4 ma 24, 33 idle standby current: cs# = high; all banks are idle; t ck = t ck (min); cke = high; address and other control inputs changing once per clock cycle; v in =v ref for dq, dqs, and dm i dd 2f 50 50 ma 51 active power-down standby current: one bank active; power- down mode; t ck = t ck (min); cke = low i dd 3p 35 30 ma 24, 33 active standby current: cs# = high; cke = high; one bank active; t rc = t ras (max); t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle i dd 3n 60 55 ma 23 operating burst read current: burst = 2; continuous burst reads; one bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); i out =0ma i dd 4r 180 160 ma 23, 48 operating burst write current: burst = 2; continuous burst writes; one bank active; address and control inputs changing once per clock cycle; t ck = t ck (min); dq, dm, and dqs inputs changing twice per clock cycle i dd 4w 180 160 ma 23 auto refresh burst current: t refc = t rfc (min) i dd 5 160 160 ma 50 t refc = 7.8s i dd 5a 6 6 ma 28, 50 t refc = 1.95s (at) i dd 5a 9 9 ma 28, 50 self refresh current: cke 0.2v standard i dd 64 4ma12 low power (l) i dd 6a 2 2 ma 12 operating bank interleave read current: four-bank in terleaving reads (burst = 4) with auto precharge; t rc = minimum t rc allowed; t ck = t ck (min); address and control inputs change only during active, read, or write commands i dd 7 290 270 ma 23, 49
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 18 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac electrical specifications ? dc and ac stresses greater than those listed in table 9 may cause permanent damage to the device. this is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. table 9: absolute maximum ratings parameter min max units v dd supply voltage relative to v ss ?1v +3.6v v v dd q supply voltage relative to v ss ?1v +3.6v v v ref and inputs voltage relative to v ss ?1v +3.6v v i/o pins voltage relative to v ss ?0.5v v dd q + 0.5v v storage temperature (plastic) ?55 +150 c short circuit output current ?50ma table 10: dc electrical characteristi cs and operating conditions (-5b) notes: 1?5 and 17 apply to the entire table; notes appear on page 35; v dd q = +2.6v 0.1v, v dd = +2.6v 0.1v parameter/condition symbol min max units notes supply voltage v dd +2.5 +2.7 v 37, 42 i/o supply voltage v dd q +2.5 +2.7 v 37, 42, 45 i/o reference voltage v ref 0.49 v dd q 0.51 v dd q v 7, 45 i/o termination voltage (system) v tt v ref - 0.04 v ref + 0.04 v 8, 45 input high (logic 1) voltage v ih ( dc )v ref + 0.15 v dd + 0.3 v 29 input low (logic 0) voltage v il ( dc )?0.3v ref - 0.15 v 29 input leakage current: any input 0v v in v dd , v ref pin 0v v in 1.35v (all other pins not under test = 0v) i i ?2 +2 a output leakage current: (dq are disabled; 0v v out v dd q ) i oz ?5 +5 a full-drive option output levels (x4, x8, x16): high current (v out = v dd q - 0.373v, minimum v ref , minimum v tt ) i oh ?16.8 ? ma 38, 40 low current (v out = 0.373v, maximum v ref , maximum v tt ) i ol +16.8 ? ma reduced-drive option output levels (design revision f and k only): high current (v out = v dd q - 0.373v, minimum v ref , minimum v tt ) i ohr ?9 ? ma 39, 40 low current (v out = 0.763v, maximum v ref , maximum v tt ) i olr +9 ? ma ambient operating temperatures commercial t a 0+70c industrial t a ?40 +85 c automotive t a ?40 +105 c
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 19 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac table 11: dc electrical characteristics and operating conditions (-6, -6t, -75e, -75z, -75) notes: 1?5, 17 apply to the entire table; notes appear on page 35; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v parameter/condition symbol min max units notes supply voltage v dd +2.3 +2.7 v 37, 42 i/o supply voltage v dd q +2.3 +2.7 v 37, 42, 45 i/o reference voltage v ref 0.49 v dd q 0.51 v dd q v 7, 45 i/o termination voltage (system) v tt v ref - 0.04 v ref + 0.04 v 8, 45 input high (logic 1) voltage v ih ( dc )v ref + 0.15 v dd + 0.3 v 29 input low (logic 0) voltage v il ( dc )?0.3v ref - 0.15 v 29 input leakage current: any input 0v v in v dd , v ref pin 0v v in 1.35v (all other pins not under test = 0v) i i ?2 +2 a output leakage current: (dq are disabled; 0v v out v dd q ) i oz ?5 +5 a full-drive option output levels (x4, x8, x16): high current (v out = v dd q - 0.373v, minimum v ref , minimum v tt ) i oh ?16.8 ? ma 38, 40 low current (v out = 0.373v, maximum v ref , maximum v tt ) i ol +16.8 ? ma reduced-drive option output levels (design revision f and k only): high current (v out = v dd q - 0.763v, minimum v ref , minimum v tt ) i ohr ?9 ? ma 39, 40 low current (v out = 0.763v, maximum v ref , maximum v tt ) i olr +9 ? ma ambient operating temperatures commercial t a 0+70c industrial t a ?40 +85 c automotive t a ?40 +105 c table 12: ac input operating conditions notes: 1?5, 17 apply to the enti re table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v (v dd q = +2.6v 0.1v, v dd = +2.6v 0.1v for -5b) parameter/condition symbol min max units notes input high (logic 1) voltage v ih ( ac )v ref + 0.310 ? v 15, 29, 41 input low (logic 0) voltage v il ( ac )?v ref - 0.310 v 15, 29, 41 i/o reference voltage v ref ( ac ) 0.49 v dd q 0.51 v dd qv 7
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 20 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac figure 10: input voltage waveform notes: 1. v oh (min) with test load is 1.927v. 2. v ol (max) with test load is 0.373v. 3. numbers in diagram reflect nomin al values utilizing circuit below for all devices other than -5b. 0.940v 1.100v 1.200v 1.225v 1.250v 1.275v 1.300v 1.400v 1.5 6 0v v il ( ac ) v il ( dc ) v ref - a c noise v ref - d c error v ref + d c error v ref + a c noise re c eiver tr a n s mi tte r v ih ( dc ) v ih ( ac ) v oh (min) ( 1 . 6 70v 1 for ss tl_2 termination) v in ( ac ) - provi d e s margin b etween v ol (max) an d v il ( ac ) v ss q v dd q (2.3v min) v ol (max) (0.83v 2 for ss tl_2 termination) s ystem noise mar g in (power/ g roun d , c rosstalk, si g nal inte g rity attenuation) referen c e point 25 25 v tt
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 21 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac figure 11: sstl_2 clock input notes: 1. ck or ck# may not be more positive than v dd q + 0.3v or more negative than v ss - 0.3v. 2. this provides a minimum of 1.15v to a ma ximum of 1.35v and is always half of v dd q. 3. ck and ck# must cross in this region. 4. ck and ck# must meet at least v id ( dc ) min when static and is centered around v mp ( dc ) . 5. ck and ck# must have a mi nimum 700mv peak-to-peak swing. 6. for ac operation, all dc clock re q uirements must also be satisfied. 7. numbers in diagram reflect nominal va lues for all devices other than -5b. table 13: clock input operating conditions notes: 1?5, 16, 17, 31 apply to the en tire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v (v dd q = +2.6v 0.1v, v dd = +2.6v 0.1v for -5b) parameter/condition symbol min max units notes clock input mid-point voltage: ck and ck# v mp ( dc ) 1.15 1.35 v 7, 10 clock input voltage level: ck and ck# v in ( dc )?0.3 v dd q + 0.3 v 7 clock input differential voltage: ck and ck# v id ( dc )0.36 v dd q + 0.6 v 7, 9 clock input differential voltage: ck and ck# v id ( ac )0.7 v dd q + 0.6 v 9 clock input crossing point voltage: ck and ck# v ix ( ac ) 0.5 v dd q - 0.2 0.5 v dd q + 0.2 v 10 c k c k# 2.80v maximum c lo c k level 1 minimum c lo c k level 1 ?0.30v 1.25v 1.45v 1.05v v id ( a c ) 5 v id ( d c ) 4 x x v mp ( d c ) 2 v ix ( a c ) 3 x x
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 22 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac table 14: capacitance (x4, x8 tsop) note: 14 applies to the entire table; notes appear on page 35 parameter symbol min max units notes delta input/output capacitanc e: dq0?dq3 (x4), dq0?dq7 (x8) dc io ?0.50pf 25 delta input capacitance: command and address dc i 1 ?0.50pf 30 delta input capacitance: ck, ck# dc i 2 ?0.25pf 30 input/output capacitance: dq, dqs, dm c io 4.0 5.0 pf input capacitance: command and address c i 1 2.0 3.0 pf input capacitance: ck, ck# c i 2 2.0 3.0 pf input capacitance: cke c i 3 2.0 3.0 pf table 15: capacitance (x4, x8 fbga) note: 14 applies to the entire table; notes appear on page 35 parameter symbol min max units notes delta input/output capa citance: dq, dqs, dm dc io ?0.50pf 25 delta input capacitance: command and address dc i 1 ?0.50pf 30 delta input capacitance: ck, ck# dc i 2 ?0.25pf 30 input/output capacitance: dq, dqs, dm c io 3.5 4.5 pf input capacitance: command and address c i 1 1.5 2.5 pf input capacitance: ck, ck# c i 2 1.5 2.5 pf input capacitance: cke c i 3 1.5 2.5 pf table 16: capacitance (x16 tsop) note: 14 applies to the entire table; notes appear on page 35 parameter symbol min max units notes delta input/output capacitance: dq0?dq7, ldqs, ldm dc iol ?0.50pf 25 delta input/output capacita nce: dq8?dq15, udqs, udm dc iou ?0.50pf 25 delta input capacitance: command and address dc i 1 ?0.50pf 30 delta input capacitance: ck, ck# dc i 2 ?0.25pf 30 input/output capacitance: dq, ldqs, udqs, ldm, udm c io 4.0 5.0 pf input capacitance: command and address c i 1 2.0 3.0 pf input capacitance: ck, ck# c i 2 2.0 3.0 pf input capacitance: cke c i 3 2.0 3.0 pf table 17: capacitance (x16 fbga) note: 14 applies to the entire table; notes appear on page 35 parameter symbol min max units notes delta input/output capacitance: dq0?dq7, ldqs, ldm dc iol ?0.50pf 25 delta input/output capacita nce: dq8?dq15, udqs, udm dc iou ?0.50pf 25 delta input capacitance: command and address dc i 1 ?0.50pf 30 delta input capacitance: ck, ck# dc i 2 ?0.25pf 30 input/output capacitance: dq, ldqs, udqs, ldm, udm c io 3.5 4.5 pf input capacitance: command and address c i 1 1.5 2.5 pf input capacitance: ck, ck# c i 2 1.5 2.5 pf input capacitance: cke c i 3 1.5 2.5 pf
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 23 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac table 18: electrical characteristics and recommended ac operating conditions (-5b) notes 1?6, 16?18, 34 apply to the enti re table; notes appear on page 35; 0c t a +70c; v dd q = +2.6v 0.1v, v dd = +2.6v 0.1v ac characteristics -5b units notes parameter symbol min max access window of dq from ck/ck# t ac ?0.70 +0.70 ns ck high-level width t ch 0.45 0.55 t ck 31 clock cycle time cl = 3 t ck (3) 5 7.5 ns 52 cl = 2.5 t ck (2.5) 6 13 ns 46, 52 cl = 2 t ck (2) 7.5 13 ns 46, 52 ck low-level width t cl 0.45 0.55 t ck 31 dq and dm input hold time relative to dqs t dh 0.40 ? ns 27, 32 dq and dm input pulse width (for each input) t dipw 1.75 ? ns 32 access window of dqs from ck/ck# t dqsck ?0.60 +0.60 ns dqs input high pulse width t dqsh 0.35 ? t ck dqs input low pulse width t dqsl 0.35 ? t ck dqs?dq skew, dqs to last dq valid, per group, per access t dqsq ? 0.40 ns 26, 27 write command to first dqs latching transition t dqss 0.72 1.28 t ck dq and dm input setup time relative to dqs t ds 0.40 ? ns 27, 32 dqs falling edge from ck rising ? hold time t dsh 0.2 ? t ck dqs falling edge to ck rising ? setup time t dss 0.2 ? t ck half-clock period t hp t ch, t cl ? ns 35 data-out high-z window from ck/ck# t hz ? +0.70 ns 19, 43 address and control input hold time (slew rate 0.5 v/ns) t ih f 0.60 ? ns 15 address and control input pulse width (for each input) t ipw 2.2 ? ns address and control input setup time (slew rate 0.5 v/ns) t is f 0.60 ? ns 15 data-out low-z window from ck/ck# t lz ?0.70 ? ns 19, 43 load mode register command cycle time t mrd 10 ? ns dq?dqs hold, dqs to first dq to go non-valid, per access t qh t hp - t qhs ? ns 26, 27 data hold skew factor t qhs ? 0.50 ns active-to-read with auto precharge command t rap 15 ? ns active-to-precharge command t ras 40 70,000 ns 36 active-to-active/auto refresh command period t rc 55 ? ns active-to-read or write delay t rcd 15 ? ns refresh-to-refresh command interval t refc ? 70.3 s 24 refresh-to-refresh command interval (automotive) t refc at ? 17.55 s 24 average periodic refresh interval t refi ? 7.8 s 24 average periodic refresh interval (automotive) t refi at ?1.95s 24 auto refresh command period t rfc 70 ? ns 50 precharge command period t rp 15 ? ns dqs read preamble t rpre 0.9 1.1 t ck 44 dqs read postamble t rpst 0.4 0.6 t ck 44 active bank a to active bank b command t rrd 10 ? ns terminating voltage delay to v dd t vtd 0 ? ns dqs write preamble t wpre 0.25 ? t ck dqs write preamble setup time t wpres 0 ? ns 21, 22 dqs write postamble t wpst 0.4 0.6 t ck 20
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 24 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac write recovery time t wr 15 ? ns internal write-to-read command delay t wtr 2 ? t ck exit self refresh-to-non-read command t xsnr 70 ? ns exit self refresh-to-read command t xsrd 200 ? t ck data valid output window n/a t qh - t dqsq ns 26 table 18: electrical characteristics and recommended ac operating conditions (-5b) (continued) notes 1?6, 16?18, 34 apply to the enti re table; notes appear on page 35; 0c t a +70c; v dd q = +2.6v 0.1v, v dd = +2.6v 0.1v ac characteristics -5b units notes parameter symbol min max
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 25 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac table 19: electrical characteristics and recommended ac operating conditions (-6) notes: 1?6, 16?18, 34 appl y to the entire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v ac characteristics -6 (fbga) units notes parameter symbol min max access window of dq from ck/ck# t ac ?0.70 +0.70 ns ck high-level width t ch 0.45 0.55 t ck 31 clock cycle time cl = 2.5 t ck (2.5) 6 13 ns 46, 52 cl = 2 t ck (2) 7.5 13 ns 46, 52 ck low-level width t cl 0.45 0.55 t ck 31 dq and dm input hold time relative to dqs t dh 0.45 ? ns 27, 32 dq and dm input pulse width (for each input) t dipw 1.75 ? ns 32 access window of dqs from ck/ck# t dqsck ?0.6 +0.6 ns dqs input high pulse width t dqsh 0.35 ? t ck dqs input low pulse width t dqsl 0.35 ? t ck dqs?dq skew, dqs to last dq valid, per group, per access t dqsq ? 0.4 ns 26, 27 write command to first dqs latching transition t dqss 0.75 1.25 t ck dq and dm input setup time relative to dqs t ds 0.45 ? ns 27, 32 dqs falling edge from ck rising - hold time t dsh 0.2 ? t ck dqs falling edge to ck rising - setup time t dss 0.2 ? t ck half-clock period t hp t ch, t cl ?ns35 data-out high-z window from ck/ck# t hz ? +0.7 ns 19, 43 address and control input ho ld time (fast slew rate) t ih f 0.75 ? ns address and control input ho ld time (slow slew rate) t ih s 0.8 ? ns 15 address and control input pulse width (for each input) t ipw 2.2 ? ns address and control input se tup time (fast slew rate) t is f 0.75 ? ns address and control input se tup time (slow slew rate) t is s 0.8 ? ns 15 data-out low-z window from ck/ck# t lz ?0.7 ? ns 19, 43 load mode register command cycle time t mrd 12 ? ns dq-dqs hold, dqs to first dq to go non-valid, per access t qh t hp - t qhs ? ns 26, 27 data hold skew factor t qhs ? 0.50 ns active-to-read with auto precharge command t rap 15 ? ns active-to-precharge command t ras 42 70,000 ns 36, 54 active-to-active/auto refresh command period t rc 60 ? ns active-to-read or write delay t rcd 15 ? ns refresh-to-refresh command interval t refc ? 70.3 s 24 refresh-to-refresh command interval (automotive) t refc at ? 17.55 s 24 average periodic refresh interval t refi ? 7.8 s 24 average periodic refresh interval (automotive) t refi at ?1.95s 24 auto refresh command period t rfc 72 ? ns 50 precharge command period t rp 15 ? ns dqs read preamble t rpre 0.9 1.1 t ck 44 dqs read postamble t rpst 0.4 0.6 t ck 44 active bank a to active bank b command t rrd 12 ? ns terminating voltage delay to v ss t vtd 0 ? ns dqs write preamble t wpre 0.25 ? t ck
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 26 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac dqs write preamble setup time t wpres 0 ? ns 21, 22 dqs write postamble t wpst 0.4 0.6 t ck 20 write recovery time t wr 15 ? ns internal write-to-read command delay t wtr 1 ? t ck exit self refresh-to-non-read command t xsnr 75 ? ns exit self refresh-to-read command t xsrd 200 ? t ck data valid output window n/a t qh - t dqsq ns 26 table 19: electrical characteristics and recommended ac operating conditions (-6) (continued) notes: 1?6, 16?18, 34 appl y to the entire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v ac characteristics -6 (fbga) units notes parameter symbol min max
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 27 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac table 20: electrical characteristics and recommended ac operating conditions (-6t) notes: 1?6, 16?18, 34 appl y to the entire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v ac characteristics -6t (tsop) units notes parameter symbol min max access window of dq from ck/ck# t ac ?0.70 +0.70 ns ck high-level width t ch 0.45 0.55 t ck 31 clock cycle time cl = 2.5 t ck (2.5) 6 13 ns 46, 52 cl = 2 t ck (2) 7.5 13 ns 46, 52 ck low-level width t cl 0.45 0.55 t ck 31 dq and dm input hold time relative to dqs t dh 0.45 ? ns 27, 32 dq and dm input pulse width (for each input) t dipw 1.75 ? ns 32 access window of dqs from ck/ck# t dqsck ?0.6 +0.6 ns dqs input high pulse width t dqsh 0.35 ? t ck dqs input low pulse width t dqsl 0.35 ? t ck dqs?dq skew, dqs to last dq valid, per group, per access t dqsq ? 0.45 ns 26, 27 write command to first dqs latching transition t dqss 0.75 1.25 t ck dq and dm input setup time relative to dqs t ds 0.45 ? ns 27, 32 dqs falling edge from ck rising - hold time t dsh 0.2 ? t ck dqs falling edge to ck rising - setup time t dss 0.2 ? t ck half-clock period t hp t ch, t cl ?ns35 data-out high-z window from ck/ck# t hz ? +0.7 ns 19, 43 address and control input ho ld time (fast slew rate) t ih f 0.75 ? ns address and control input ho ld time (slow slew rate) t ih s 0.8 ? ns 15 address and control input pulse width (for each input) t ipw 2.2 ? ns address and control input se tup time (fast slew rate) t is f 0.75 ? ns address and control input se tup time (slow slew rate) t is s 0.8 ? ns 15 data-out low-z window from ck/ck# t lz ?0.7 ? ns 19, 43 load mode register command cycle time t mrd 12 ? ns dq-dqs hold, dqs to first dq to go non-valid, per access t qh t hp - t qhs ? ns 26, 27 data hold skew factor t qhs ? 0.55 ns active-to-read with auto precharge command t rap 15 ? ns active-to-precharge command t ras 42 70,000 ns 36, 54 active-to-active/auto refresh command period t rc 60 ? ns active-to-read or write delay t rcd 15 ? ns refresh-to-refresh command interval t refc ? 70.3 s 24 refresh-to-refresh command interval (automotive) t refc at ? 17.55 s 24 average periodic refresh interval t refi ? 7.8 s 24 average periodic refresh interval (automotive) t refi at ?1.95s 24 auto refresh command period t rfc 72 ? ns 50 precharge command period t rp 15 ? ns dqs read preamble t rpre 0.9 1.1 t ck 44 dqs read postamble t rpst 0.4 0.6 t ck 44 active bank a to active bank b command t rrd 12 ? ns terminating voltage delay to v ss t vtd 0 ? ns dqs write preamble t wpre 0.25 ? t ck
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 28 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac dqs write preamble setup time t wpres 0 ? ns 21, 22 dqs write postamble t wpst 0.4 0.6 t ck 20 write recovery time t wr 15 ? ns internal write-to-read command delay t wtr 1 ? t ck exit self refresh-to-non-read command t xsnr 75 ? ns exit self refresh-to-read command t xsrd 200 ? t ck data valid output window n/a t qh - t dqsq ns 26 table 20: electrical characteristics and recommen ded ac operating conditions (-6t) (continued) notes: 1?6, 16?18, 34 appl y to the entire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v ac characteristics -6t (tsop) units notes parameter symbol min max
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 29 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac table 21: electrical characteristics and recommended ac operating conditions (-75e) notes: 1?6, 16?18, 34 appl y to the entire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v ac characteristics -75e units notes parameter symbol min max access window of dq from ck/ck# t ac ?0.75 +0.75 ns ck high-level width t ch 0.45 0.55 t ck 31 clock cycle time cl = 2.5 t ck (2.5) 7.5 13 ns 46, 52 cl = 2 t ck (2) 7.5 13 ns 46, 52 ck low-level width t cl 0.45 0.55 t ck 31 dq and dm input hold time relative to dqs t dh 0.5 ? ns 27, 32 dq and dm input pulse width (for each input) t dipw 1.75 ? ns 32 access window of dqs from ck/ck# t dqsck ?0.75 +0.75 ns dqs input high pulse width t dqsh 0.35 ? t ck dqs input low pulse width t dqsl 0.35 ? t ck dqs?dq skew, dqs to last dq valid, per group, per access t dqsq ? 0.5 ns 26, 27 write command to first dqs latching transition t dqss 0.75 1.25 t ck dq and dm input setup time relative to dqs t ds 0.5 ? ns 27, 32 dqs falling edge from ck rising - hold time t dsh 0.2 ? t ck dqs falling edge to ck rising - setup time t dss 0.2 ? t ck half-clock period t hp t ch, t cl ?ns35 data-out high-z window from ck/ck# t hz ? +0.75 ns 19, 43 address and control input ho ld time (fast slew rate) t ih f 0.90 ? ns address and control input ho ld time (slow slew rate) t ih s 1?ns15 address and control input pulse width (for each input) t ipw 2.2 ? ns address and control input se tup time (fast slew rate) t is f 0.90 ? ns address and control input se tup time (slow slew rate) t is s 1?ns15 data-out low-z window from ck/ck# t lz ?0.75 ? ns 19, 43 load mode register command cycle time t mrd 15 ? ns dq-dqs hold, dqs to first dq to go non-valid, per access t qh t hp - t qhs ? ns 26, 27 data hold skew factor t qhs ? 0.75 ns active-to-read with auto precharge command t rap 15 ? ns active-to-precharge command t ras 40 120,000 ns 36, 54 active-to-active/auto refresh command period t rc 60 ? ns active-to-read or write delay t rcd 15 ? ns refresh-to-refresh command interval t refc ? 70.3 s 24 refresh-to-refresh command interval (automotive) t refc at ? 17.55 s 24 average periodic refresh interval t refi ? 7.8 s 24 average periodic refresh interval (automotive) t refi at ?1.95s 24 auto refresh command period t rfc 75 ? ns 50 precharge command period t rp 15 ? ns dqs read preamble t rpre 0.9 1.1 t ck 44 dqs read postamble t rpst 0.4 0.6 t ck 44 active bank a to active bank b command t rrd 15 ? ns terminating voltage delay to v ss t vtd 0 ? ns dqs write preamble t wpre 0.25 ? t ck
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 30 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac dqs write preamble setup time t wpres 0 ? ns 21, 22 dqs write postamble t wpst 0.4 0.6 t ck 20 write recovery time t wr 15 ? ns internal write-to-read command delay t wtr 1 ? t ck exit self refresh-to-non-read command t xsnr 75 ? ns exit self refresh-to-read command t xsrd 200 ? t ck data valid output window n/a t qh - t dqsq ns 26 table 21: electrical characteristics and recommen ded ac operating conditions (-75e) (continued) notes: 1?6, 16?18, 34 appl y to the entire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v ac characteristics -75e units notes parameter symbol min max
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 31 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac table 22: electrical characteristics and recommended ac operating conditions (-75z) notes: 1?6, 16?18, 34 appl y to the entire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v ac characteristics -75z units notes parameter symbol min max access window of dq from ck/ck# t ac ?0.75 +0.75 ns ck high-level width t ch 0.45 0.55 t ck 31 clock cycle time cl = 2.5 t ck (2.5) 7.5 13 ns 46 cl = 2 t ck (2) 7.5 13 ns 46 ck low-level width t cl 0.45 0.55 t ck 31 dq and dm input hold time relative to dqs t dh 0.5 ? ns 27, 32 dq and dm input pulse width (for each input) t dipw 1.75 ? ns 32 access window of dqs from ck/ck# t dqsck ?0.75 +0.75 ns dqs input high pulse width t dqsh 0.35 ? t ck dqs input low pulse width t dqsl 0.35 ? t ck dqs?dq skew, dqs to last dq valid, per group, per access t dqsq ? 0.5 ns 26, 27 write command-to-first dq s latching transition t dqss 0.75 1.25 t ck dq and dm input setup time relative to dqs t ds 0.5 ? ns 27, 32 dqs falling edge from ck rising ? hold time t dsh 0.2 ? t ck dqs falling edge to ck rising ? setup time t dss 0.2 ? t ck half-clock period t hp t ch, t cl ? ns 35 data-out high-z window from ck/ck# t hz ? +0.75 ns 19, 43 address and control input ho ld time (fast slew rate) t ih f 0.90 ? ns address and control input ho ld time (slow slew rate) t ih s 1?ns15 address and control input pulse width (for each input) t ipw 2.2 ? ns address and control input se tup time (fast slew rate) t is f 0.90 ? ns address and control input se tup time (slow slew rate) t is s 1?ns15 data-out low-z window from ck/ck# t lz ?0.75 ? ns 19, 43 load mode register command cycle time t mrd 15 ? ns dq?dqs hold, dqs to first dq to go non-valid, per access t qh t hp - t qhs ? ns 26, 27 data hold skew factor t qhs ? 0.75 ns active-to-read with auto precharge command t rap 20 ? ns active-to-precharge command t ras 40 120,000 ns 36 active-to-active/auto refresh command period t rc 65 ? ns active-to-read or write delay t rcd 20 ? ns refresh-to-refresh command interval t refc ? 70.3 s 24 refresh-to-refresh command interval (automotive) t refc at ? 17.55 s 24 average periodic refresh interval t refi ? 7.8 s 24 average periodic refresh interval (automotive) t refi at ?1.95s 24 auto refresh command period t rfc 75 ? ns 50 precharge command period t rp 20 ? ns dqs read preamble t rpre 0.9 1.1 t ck 44 dqs read postamble t rpst 0.4 0.6 t ck 44 active bank a to active bank b command t rrd 15 ? ns terminating voltage delay to v dd t vtd 0 ? ns dqs write preamble t wpre 0.25 ? t ck dqs write preamble setup time t wpres 0 ? ns 21, 22
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 32 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac dqs write postamble t wpst 0.4 0.6 t ck 20 write recovery time t wr 15 ? ns internal write-to-read command delay t wtr 1 ? t ck exit self refresh-to-non-read command t xsnr 75 ? ns exit self refresh-to-read command t xsrd 200 ? t ck data valid output window n/a t qh - t dqsq ns 26 table 22: electrical characteristics and recommen ded ac operating conditions (-75z) (continued) notes: 1?6, 16?18, 34 appl y to the entire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v ac characteristics -75z units notes parameter symbol min max
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 33 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac table 23: electrical characteristics and recommended ac operating conditions (-75) notes: 1?6, 16?18, 34 appl y to the entire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v ac characteristics -75 units notes parameter symbol min max access window of dq from ck/ck# t ac ?0.75 +0.75 ns ck high-level width t ch 0.45 0.55 t ck 31 clock cycle time cl = 2.5 t ck (2.5) 7.5 13 ns 46 cl = 2 t ck (2) 10 13 ns 46 ck low-level width t cl 0.45 0.55 t ck 31 dq and dm input hold time relative to dqs t dh 0.5 ? ns 27, 32 dq and dm input pulse width (for each input) t dipw 1.75 ? ns 32 access window of dqs from ck/ck# t dqsck ?0.75 +0.75 ns dqs input high pulse width t dqsh 0.35 ? t ck dqs input low pulse width t dqsl 0.35 ? t ck dqs?dq skew, dqs to last dq valid, per group, per access t dqsq ? 0.5 ns 26, 27 write command-to-first dq s latching transition t dqss 0.75 1.25 t ck dq and dm input setup time relative to dqs t ds 0.5 ? ns 27, 32 dqs falling edge from ck rising ? hold time t dsh 0.2 ? t ck dqs falling edge to ck rising ? setup time t dss 0.2 ? t ck half-clock period t hp t ch, t cl ? ns 35 data-out high-z window from ck/ck# t hz ? +0.75 ns 19, 43 address and control input ho ld time (fast slew rate) t ih f 0.90 ? ns address and control input ho ld time (slow slew rate) t ih s 1?ns15 address and control input pulse width (for each input) t ipw 2.2 ? ns address and control input se tup time (fast slew rate) t is f 0.90 ? ns address and control input se tup time (slow slew rate) t is s 1?ns15 data-out low-z window from ck/ck# t lz ?0.75 ? ns 19, 43 load mode register command cycle time t mrd 15 ? ns dq?dqs hold, dqs to first dq to go non-valid, per access t qh t hp - t qhs ? ns 26, 27 data hold skew factor t qhs ? 0.75 ns active-to-read with auto precharge command t rap 20 ? ns active-to-precharge command t ras 40 120,000 ns 36 active-to-active/auto refresh command period t rc 65 ? ns active-to-read or write delay t rcd 20 ? ns refresh-to-refresh command interval t refc ? 70.3 s 24 refresh-to-refresh command interval (automotive) t refc at ? 17.55 s 24 average periodic refresh interval t refi ? 7.8 s 24 average periodic refresh interval (automotive) t refi at ?1.95s 24 auto refresh command period tr fc 75 ? ns 50 precharge command period t rp 20 ? ns dqs read preamble t rpre 0.9 1.1 tck 44 dqs read postamble t rpst 0.4 0.6 tck 44 active bank a to active bank b command t rrd 15 ? ns terminating voltage delay to v dd t vtd 0 ? ns dqs write preamble t wpre 0.25 ? tck dqs write preamble setup time t wpres 0 ? ns 21, 22
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 34 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac dqs write postamble twpst 0.4 0.6 tck 20 write recovery time twr 15 ? ns internal write-to-read command delay t wtr 1 ? t ck exit self refresh-to-non-read command t xsnr 75 ? ns exit self refresh-to-read command t xsrd 200 ? t ck data valid output window n/a t qh - t dqsq ns 26 table 24: input slew rate derating values for addresses and commands note: 15 applies to the entire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v speed slew rate t is t ih units -75z/-75e 0.500 v/ns 1.00 1 ns -75z/-75e 0.400 v/ns 1.05 1 ns -75z/-75e 0.300 v/ns 1.10 1 ns table 25: input slew rate derating values for dq, dqs, and dm note: 32 applies to the entire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v speed slew rate t ds t dh units -75z/-75e 0.500 v/ns 0.50 0.50 ns -75z/-75e 0.400 v/ns 0.55 0.55 ns -75z/-75e 0.300 v/ns 0.60 0.60 ns table 23: electrical characteristics and recommende d ac operating conditions (-75) (continued) notes: 1?6, 16?18, 34 appl y to the entire table; notes appear on page 35; 0c t a +70c; v dd q = +2.5v 0.2v, v dd = +2.5v 0.2v ac characteristics -75 units notes parameter symbol min max
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 35 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac notes 1. all voltages referenced to v ss . 2. tests for ac timing, i dd , and electrical ac and dc ch aracteristics may be conducted at nominal reference/supply voltage levels, but the related specifications and the device operation are guaranteed for the full voltage range specified. 3. outputs (except for i dd measurements) measured with equivalent load: 4. ac timing and i dd tests may use a v il -to-v ih swing of up to 1.5v in the test environ- ment, but input timing is still referenced to v ref (or to the crossing point for ck/ck#), and parameter specifications are guaranteed for the specified ac input levels under normal use conditions. the minimum slew rate for the input signals used to test the device is 1 v/ns in the range between v il ( ac ) and v ih ( ac ). 5. the ac and dc input level specifications are as defined in the sstl_2 standard (that is, the receiver will effectively switch as a result of the signal crossing the ac input level and will remain in that state as long as the signal does not ring back above [below] the dc input low [high] level). 6. all speed grades are not offered on all densities. refer to page 1 for availability. 7. v ref is expected to equal v dd q/2 of the transmitting device and to track variations in the dc level of the same. peak-to- peak noise (noncommon mode) on v ref may not exceed 2% of the dc value. thus, from v dd q/2, v ref is allowed 25mv for dc error and an additional 25mv for ac noise. this measurement is to be taken at the nearest v ref bypass capacitor. 8. v tt is not applied directly to the device. v tt is a system supply for signal termination resistors, it is expected to be set equal to v ref , and it must track variations in the dc level of v ref . 9. v id is the magnitude of the difference between the input level on ck and the input level on ck#. 10. the value of v ix and v mp is expected to equal v dd q/2 of the transmitting device and must track variations in the dc level of the same. 11. i dd is dependent on output loading and cycle rates. specified values are obtained with minimum cycle times at cl = 3 for -5b; cl = 2.5, -6/-6t/-75; and cl = 2, -75e/-75z speeds with the outputs open. 12. enables on-chip refresh and address counters. 13. i dd specifications are tested af ter the device is properly initialized and is averaged at the defined cycle rate. 14. this parameter is sampled. v dd = +2.5v 0.2v, v dd q = +2.5v 0.2v, v ref =v ss , f =100mhz, t a =25c, v out ( dc )=v dd q/2, v out (peak-to-peak) = 0.2v. dm input is grouped with i/o pins, reflecting the fact that they are matched in loading. 15. for slew rates less than 1 v/ns and greater than or equal to 0.5 v/ns. if the slew rate is less than 0.5 v/ns, timing must be derated: t is has an additional 50ps per each 100 mv/ns reduction in slew rate from the 500 mv/ns. t ih has 0ps added, that is, it remains constant. if the slew rate exceeds 4.5 v/ns, functionality is uncertain. for -5b, -6, and -6t, slew rates must be greater than or equal to 0.5 v/ns. output (v out ) reference point 50 v tt 30pf
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 36 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac 16. the ck/ck# input reference level (for timi ng referenced to ck/ck#) is the point at which ck and ck# cross; the input reference level for signals other than ck/ck# is v ref . 17. inputs are not recognized as valid until v ref stabilizes. once initialized, including self refresh mode, v ref must be powered within specified range. exception: during the period before v ref stabilizes, cke < 0.3 v dd is recognized as low. 18. the output timing referenc e level, as measured at the timing reference point (indi- cated in note 3), is v tt . 19. t hz and t lz transitions occur in the same access time windows as data valid transi- tions. these parameters are not referenced to a specific voltage level, but specify when the device output is no longer dr iving (high-z) or begins driving (low-z). 20. the intent of the ?don?t care? state af ter completion of the postamble is the dqs- driven signal should either be high, low, or high-z, and that any signal transition within the input switching region must follow valid input requirements. that is, if dqs transitions high (above v ih [ dc ] min) then it must not transition low (below v ih [ dc ] prior to t dqsh [min]). 21. this is not a device limit. the device will operate with a negative value, but system performance could be degraded due to bus turnaround. 22. it is recommended that dqs be valid (high or low) on or before the write com- mand. the case shown (dqs going from high-z to logic low) applies when no writes were previously in progress on the bus. if a previous write was in progress, dqs could be high during this time, depending on t dqss. 23. min ( t rc or t rfc) for i dd measurements is the smallest multiple of t ck that meets the minimum absolute value for the respective parameter. t ras (max) for i dd measure- ments is the largest multiple of t ck that meets the maximum absolute value for t ras. 24. the refresh period is 64ms (commerial and industrial) or 16ms (automotive). this equates to an average refresh rate of 7 .8125s (commercial and industrial) or 1.95us (automotive). however, an auto refresh co mmand must be assert ed at least once every 70.3s(commerial and in dustrial) or 17.55s (automot ive); burst refreshing or posting by the dram controller greater than 8 refresh cycles is not allowed. 25. the i/o capacitance per dqs and dq byte/group will not differ by more than this maximum amount for any given device. 26. the data valid window is derive d by achieving other specifications: t hp ( t ck/2), t dqsq, and t qh ( t qh = t hp - t qhs). the data valid window derates in direct propor- tion to the clock duty cycle and a practical data valid window can be derived. the clock is allowed a maximum duty cycle vari ation of 45/55, because functionality is uncertain when operating beyond a 45/55 ratio. the data valid window derating curves are provided in figure 12 on page 37 for duty cycles ranging between 50/50 and 45/55. 27. referenced to each output group: x4 = d qs with dq0?dq3; x8 = dqs with dq0?dq7; x16 = ldqs with dq0?dq7 an d udqs with dq8?dq15. 28. this limit is actually a nominal value and does not result in a fail value. cke is high during the refresh command period ( t rfc [min]), else cke is low (that is, during standby). 29. to maintain a valid level, the transitioning edge of the input must: 29a. sustain a constant slew rate from the current ac level through to the target ac level, v il ( ac ) or v ih ( ac ). 29b. reach at least the target ac level. 29c. after the ac target level is reached, co ntinue to maintain at least the target dc level, v il ( dc ) or v ih ( dc ).
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 37 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac 30. the input capacitance per pin group will not differ by more than this maximum amount for any given device. 31. ck and ck# input slew rate must be 1v/ns ( 2 v/ns if measured differentially). figure 12: derating data valid window ( t qh ? t dqsq) 32. dq and dm input slew rates must not deviate from dqs by more than 10%. if the dq/ dm/dqs slew rate is less than 0.5 v/ns, timing must be derated: 50ps must be added to t ds and t dh for each 100 mv/ns reduction in slew rate. for -5b, -6, and -6t speed grades, the slew rate must be 0.5 v/ns. if the slew rate exceeds 4 v/ns, functionality is uncertain. 33. v dd must not vary more than 4% if cke is not active while any bank is active. 34. the clock is allowed up to 150ps of jitter. each timing parameter is allowed to vary by the same amount. 35. t hp (min) is the lesser of t cl (min) and t ch (min) actually applied to the device ck and ck# inputs, collectively, during bank active. 36. reads and writes with auto precharge are not allowed to be issued until t ras (min) can be satisfied prior to the intern al precharge command being issued. 37. any positive glitch must be less than 1/ 3 of the clock cycle and not more than +400mv or 2.9v (+300mv or 2.9v maximum for -5b) , whichever is less. any negative glitch must be less than 1/3 of the clock cycle and not exceed either ? 300mv or 2.2v (2.4v for -5b), whichever is more positive. the average cannot be below the +2.5v (2.6v for -5b) minimum. 38. normal output drive curves: 38a. the full driver pull-down current variation from min to max process; tempera- ture and voltage will lie within the outer bounding lines of the v-i curve of figure 13 on page 38. 38b. the driver pull-down current variation, within nominal voltage and temperature limits, is expected, but not guaranteed, to lie within the inner bounding lines of the v-i curve of figure 13 on page 38. 3.0ns 2.5ns 2.0ns 1.5ns 1.0ns 50/50 49/51 48/53 46/54 47/53 45/55 -6t @ t ck = 7.5ns -75e / -75 @ t ck = 7.5ns -6 @ t ck = 6ns -6t @ t ck = 6ns -5b @ t ck = 5ns 1.48 1.45 1.43 1.40 1.38 1.35 2.75 2.60 2.56 2.53 2.45 2.41 2.38 2.68 2.35 2.31 2.28 2.13 2.20 2.16 2.43 2.10 2.07 2.04 1.89 1.86 1.83 1.80 1.98 1.95 2.00 1.97 1.94 1.91 1.88 1.73 1.70 1.82 1.79 1.58 1.55 clock dut y c y cle data valid window 2.71 2.46 1.53 2.64 2.39 1.92 1.76 1.85 1.60 1.50 2.49 2.50 2.24 2.01
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 38 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac 38c. the full driver pull-up current variation from min to max process; temperature and voltage will lie within the outer bounding lines of the v-i curve of figure 14 on page 38. 38d. the driver pull-up current variation within nominal limits of voltage and temper- ature is expected, but not guaranteed, to li e within the inner bounding lines of the v-i curve of figure 14 on page 38. 38e. the full ratio variation of max to min pull-up and pull-down current should be between 0.71 and 1.4 for drain-to-source voltages from 0.1v to 1.0v at the same voltage and temperature. 38f. the full ratio variation of the nominal pull-up to pull-down current should be unity 10% for device drain-to-source voltages from 0.1v to 1.0v. figure 13: full drive pull-down characteristics figure 14: full drive pull-up characteristics 39. reduced output drive curves: 39a. the full driver pull-down current variation from min to max process; tempera- ture and voltage will lie within the outer bounding lines of the v-i curve of figure 15 on page 39. 39b. the driver pull-down current variation, within nominal voltage and temperature limits, is expected, but not guaranteed, to lie within the inner bounding lines of the v-i curve of figure 15 on page 39. 39c. the full driver pull-up current variation from min to max process; temperature and voltage will lie within the outer boun ding lines of the v-i curve of figure 16. 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 i out (ma) v out (v) -200 -180 -160 -140 -120 -100 -8 0 -6 0 -4 0 -2 0 0 0. 0 0 . 5 1. 0 1 . 5 2. 0 2 . 5 i out (ma) v dd q - v out (v)
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 39 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac 39d. the driver pull-up current variation, within nominal voltage and temperature limits, is expected, but not guaranteed, to lie within the inner bounding lines of the v-i curve of figure 16 on page 39. 39e. the full ratio variation of the max-to-min pull-up and pull-down current should be between 0.71 and 1.4 for device drain- to-source voltages from 0.1v to 1.0v at the same voltage and temperature. 39f. the full ratio variation of the nominal pull-up to pull-down current should be unity 10%, for device drain-to-sou rce voltages from 0.1v to 1.0v. figure 15: reduced drive pull-down characteristics figure 16: reduced drive pull-up characteristics 40. the voltage levels used are derived from a minimum v dd level and the referenced test load. in practice, the voltage levels obtained from a properly terminated bus will pro- vide significantly different voltage values. 41. v ih overshoot: v ih (max) = v dd q + 1.5v for a pulse width 3ns, and the pulse width can not be greater than 1/3 of the cycle rate. vil undershoot: vil (min) = ? 1.5v for a pulse width 3ns, and the pulse width can not be greater than 1/3 of the cycle rate. 42. v dd and v dd q must track each other. 43. t hz (max) will prevail over t dqsck (max) + t rpst (max) condition. t lz (min) will prevail over t dqsck (min) + t rpre (max) condition. 0 10 20 30 40 50 60 70 80 0 . 00 . 5 1 . 01 . 5 2.0 2.5 i out (ma) v out (v) -80 -70 -60 -50 -40 -30 -20 -10 0 0.0 0.5 1.0 1.5 2.0 2.5 i out (ma) v dd q - v out (v)
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 40 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac 44. t rpst end point and t rpre begin point are not referenced to a specific voltage level but specify when the device output is no longer driving ( t rpst) or begins driving ( t rpre). 45. during initialization, v dd q, v tt , and v ref must be equal to or less than v dd + 0.3v. alternatively, v tt may be 1.35v maximum during power-up, even if v dd /v dd q are 0v, provided a minimum of 42 of series resistance is used between the v tt supply and the input pin. 46. the current micron part operates below 83 mhz (slowest specified jedec operating frequency). as such, future die may not reflect this option. 47. when an input signal is high or low, it is defined as a steady state logic high or low. 48. random address is changing; 50% of data is changing at every transfer. 49. random address is changing; 100% of data is changing at every transfer. 50. cke must be active (high) during the entire time a refresh command is executed. that is, from the time the auto refres h command is registered, cke must be active at each risi ng clock edge, until t rfc has been satisfied. 51. i dd 2n specifies the dq, dqs, and dm to be driven to a valid high or low logic level. i dd 2q is similar to i dd 2f except i dd 2q specifies the address and control inputs to remain stable. although i dd 2f, i dd 2n, and i dd 2q are similar, i dd 2f is ?worst case.? 52. whenever the operating frequency is altered, not including jitter, the dll is required to be reset followed by 200 clock cycles before any read command. 53. this is the dc voltage supplied at the dram and is inclusive of all noise up to 20 mhz. any noise above 20 mhz at the dram genera ted from any source other than that of the dram itself may not exceed th e dc voltage range of 2.6v 100mv. 54. the -6/-6t speed grades will operate with t ras (min) = 40ns and t ras (max) = 120,000ns at any slower frequency.
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 41 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac table 26: normal output drive characteristics characteristics are specified under best, wors t, and nominal process variation/conditions voltage (v) pull-down current (ma) pull-up current (ma) nominal low nominal high min max nominal low nominal high min max 0.1 6.0 6.8 4.6 9.6 ?6.1 ?7.6 ?4.6 ?10.0 0.2 12.2 13.5 9.2 18.2 ?12.2 ?14.5 ?9.2 ?20.0 0.3 18.1 20.1 13.8 26.0 ?18.1 ?21.2 ?13.8 ?29.8 0.4 24.1 26.6 18.4 33.9 ?24.0 ?27.7 ?18.4 ?38.8 0.5 29.8 33.0 23.0 41.8 ?29.8 ?34.1 ?23.0 ?46.8 0.6 34.6 39.1 27.7 49.4 ?34.3 ?40.5 ?27.7 ?54.4 0.7 39.4 44.2 32.2 56.8 ?38.1 ?46.9 ?32.2 ?61.8 0.8 43.7 49.8 36.8 63.2 ?41.1 ?53.1 ?36.0 ?69.5 0.9 47.5 55.2 39.6 69.9 ?43.8 ?59.4 ?38.2 ?77.3 1.0 51.3 60.3 42.6 76.3 ?46.0 ?65.5 ?38.7 ?85.2 1.1 54.1 65.2 44.8 82.5 ?47.8 ?71.6 ?39.0 ?93.0 1.2 56.2 69.9 46.2 88.3 ?49.2 ?77.6 ?39.2 ?100.6 1.3 57.9 74.2 47.1 93.8 ?50.0 ?83.6 ?39.4 ?108.1 1.4 59.3 78.4 47.4 99.1 ?50.5 ?89.7 ?39.6 ?115.5 1.5 60.1 82.3 47.7 103.8 ?50.7 ?95.5 ?39.9 ?123.0 1.6 60.5 85.9 48.0 108.4 ?51.0 ?101.3 ?40.1 ?130.4 1.7 61.0 89.1 48.4 112.1 ?51.1 ?107.1 ?40.2 ?136.7 1.8 61.5 92.2 48.9 115.9 ?51.3 ?112.4 ?40.3 ?144.2 1.9 62.0 95.3 49.1 119.6 ?51.5 ?118.7 ?40.4 ?150.5 2.0 62.5 97.2 49.4 123.3 ?51.6 ?124.0 ?40.5 ?156.9 2.1 62.8 99.1 49.6 126.5 ?51.8 ?129.3 ?40.6 ?163.2 2.2 63.3 100.9 49.8 129.5 ?52 .0 ?134.6 ?40.7 ?169.6 2.3 63.8 101.9 49.9 132.4 ?52 .2 ?139.9 ?40.8 ?176.0 2.4 64.1 102.8 50.0 135.0 ?52 .3 ?145.2 ?40.9 ?181.3 2.5 64.6 103.8 50.2 137.3 ?52 .5 ?150.5 ?41.0 ?187.6 2.6 64.8 104.6 50.4 139.2 ?52 .7 ?155.3 ?41.1 ?192.9 2.7 65.0 105.4 50.5 140.8 ?52 .8 ?160.1 ?41.2 ?198.2
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 42 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram electrical specific ations ? dc and ac table 27: reduced output drive characteristics characteristics are specified under best, wors t, and nominal process variation/conditions voltage (v) pull-down current (ma) pull-up current (ma) nominal low nominal high min max nominal low nominal high min max 0.1 3.4 3.8 2.6 5.0 ?3.5 ?4.3 ?2.6 ?5.0 0.2 6.9 7.6 5.2 9.9 ?6.9 ?7.8 ?5.2 ?9.9 0.3 10.3 11.4 7.8 14.6 ?10.3 ?12.0 ?7.8 ?14.6 0.4 13.6 15.1 10.4 19.2 ?13.6 ?15.7 ?10.4 ?19.2 0.5 16.9 18.7 13.0 23.6 ?16.9 ?19.3 ?13.0 ?23.6 0.6 19.9 22.1 15.7 28.0 ?19.4 ?22.9 ?15.7 ?28.0 0.7 22.3 25.0 18.2 32.2 ?21.5 ?26.5 ?18.2 ?32.2 0.8 24.7 28.2 20.8 35.8 ?23.3 ?30.1 ?20.4 ?35.8 0.9 26.9 31.3 22.4 39.5 ?24.8 ?33.6 ?21.6 ?39.5 1.0 29.0 34.1 24.1 43.2 ?26.0 ?37.1 ?21.9 ?43.2 1.1 30.6 36.9 25.4 46.7 ?27.1 ?40.3 ?22.1 ?46.7 1.2 31.8 39.5 26.2 50.0 ?27.8 ?43.1 ?22.2 ?50.0 1.3 32.8 42.0 26.6 53.1 ?28.3 ?45.8 ?22.3 ?53.1 1.4 33.5 44.4 26.8 56.1 ?28.6 ?48.4 ?22.4 ?56.1 1.5 34.0 46.6 27.0 58.7 ?28.7 ?50.7 ?22.6 ?58.7 1.6 34.3 48.6 27.2 61.4 ?28.9 ?52.9 ?22.7 ?61.4 1.7 34.5 50.5 27.4 63.5 ?28.9 ?55.0 ?22.7 ?63.5 1.8 34.8 52.2 27.7 65.6 ?29.0 ?56.8 ?22.8 ?65.6 1.9 35.1 53.9 27.8 67.7 ?29.2 ?58.7 ?22.9 ?67.7 2.0 35.4 55.0 28.0 69.8 ?29.2 ?60.0 ?22.9 ?69.8 2.1 35.6 56.1 28.1 71.6 ?29.3 ?61.2 ?23.0 ?71.6 2.2 35.8 57.1 28.2 73.3 ?29.5 ?62.4 ?23.0 ?73.3 2.3 36.1 57.7 28.3 74.9 ?29.5 ?63.1 ?23.1 ?74.9 2.4 36.3 58.2 28.3 76.4 ?29.6 ?63.8 ?23.2 ?76.4 2.5 36.5 58.7 28.4 77.7 ?29.7 ?64.4 ?23.2 ?77.7 2.6 36.7 59.2 28.5 78.8 ?29.8 ?65.1 ?23.3 ?78.8 2.7 36.8 59.6 28.6 79.7 ?29.9 ?65.8 ?23.3 ?79.7
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 43 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram commands commands tables 28 and 29 provide a quick reference of available commands. two additional truth tables?table 30 on page 44 and table 31 on pa ge 45?provide current state/next state information. notes: 1. deselect and nop are functionally interchangeable. 2. ba0?ba1 provide bank address and a0?a n (128mb: n = 11; 256mb and 512mb: n = 12; 1gb: n = 13) provide row address. 3. ba0?ba1 provide bank address; a0?a i provide column address, (where a i is the most signif- icant column address bit for a given density an d configuration, see table 2 on page 2) a10 high enables the auto precharge feature (non pe rsistent), and a10 low disables the auto precharge feature. 4. applies only to read bursts wi th auto precharge disabled; this command is undefined (and should not be used) for read bursts with au to precharge enabled and for write bursts. 5. a10 low: ba0?ba1 determine which bank is precharged. a10 high: all banks are pre- charged and ba0?ba1 are ?don?t care.? 6. this command is auto refresh if cke is high; self refresh if cke is low. 7. internal refresh counter controls row addressi ng while in self refresh mode, all inputs and i/os are ?don?t care? except for cke. 8. ba0?ba1 select either the mode register or the extended mode register (ba0 = 0, ba1 = 0 select the mode register; ba0 = 1, ba1 = 0 se lect extended mode register; other combina- tions of ba0?ba1 are reserved). a0?a n provide the op-code to be written to the selected mode register. table 28: truth table 1 ? commands cke is high for all commands shown ex cept self refresh; all states and se q uences not shown are illegal or reserved function cs# ras# cas# we# address notes deselect hxxx x 1 no operation (nop) lhhh x 1 active (select bank and activate row) l l h h bank/row 2 read (select bank and colu mn and start read burst) l h l h bank/col 3 write (select bank and column and start write burst) l h l l bank/col 3 burst terminate lhhl x 4 precharge (deactivate row in bank or banks) l l h l code 5 auto refresh or self refresh (enter self refresh mode) lllh x 6, 7 load mode register llllop-code8 table 29: truth table 2 ? dm operation used to mask write data, provided co incident with the corresponding data name (function) dm dq write enable l valid write inhibit h x
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 44 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram commands notes: 1. this table applies when cke n-1 was high and cke n is high (see table 33 on page 47) and after t xsnr has been met (if the previous state was self refresh). 2. this table is bank-specific, except where note d (that is, the current state is for a specific bank and the commands shown are those allowed to be issued to that bank when in that state). exceptions are co vered in the notes below. 3. current state definitions: ? idle: the bank has been precharged, and t rp has been met. ? row active: a row in the bank has been activated, and t rcd has been met. no data bursts/accesses and no regist er accesses are in progress. ? read: a read burst has been initiated, wi th auto precharge disabled, and has not yet terminated or been terminated. ? write: a write burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. 4. the following states must not be interrupted by a command issued to the same bank. com- mand inhibit or nop commands, or allowable commands to the other bank should be issued on any clock edge occurring during th ese states. allowable commands to the other bank are determined by its current state and table 30 and according to table 31 on page 45. ? precharging: starts with re gistration of a precharge command and ends when t rp is met. once t rp is met, the bank will be in the idle state. ? row activating: starts with registration of an active command and ends when t rcd is met. once t rcd is met, the bank will be in the ?row active? state. ? read with auto precharge enabled: starts with registration of a read command with auto precharge enab led and ends when t rp has been met. once t rp is met, the bank will be in the idle state. ? write with auto precharge enabled: starts with registration of a write command with auto precharge enab led and ends when t rp has been met. once t rp is met, the bank will be in the idle state. 5. the following states must not be inte rrupted by any executable command; command inhibit or nop commands must be applied on each positive cl ock edge during these states. table 30: truth table 3 ? current state bank n ? command to bank n notes: 1?6 apply to the entire table; notes appear below current state cs# ras# cas# we# command/action notes any hxxx deselect (nop/continue previous operation) l hhh no operation (nop/continue previous operation) idle llhh active (select and activate row) lllh auto refresh 7 llll load mode register 7 row active lhlh read (select column and start read burst) 10 lhl l write (select column and start write burst) 10 llhl precharge (deactivate row in bank or banks) 8 read (auto precharge disabled) lhlh read (select column and start new read burst) 10 lhl l write (select column and start write burst) 10, 12 llhl precharge (truncate read burst, start precharge) 8 lhhl burst terminate 9 write (auto precharge disabled) lhlh read (select column and start read burst) 10, 11 lhl l write (select column and start new write burst) 10 llhl precharge (truncate write burst, start precharge) 8, 11
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 45 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram commands ? refreshing: starts with registration of an auto refresh comma nd and ends when t rfc is met. once t rfc is met, the ddr sdram will be in the all banks idle state. ? accessing mode register: sta rts with registration of an lmr command and ends when t mrd has been met. once t mrd is met, the ddr sdram will be in the all banks idle state. ? precharging all: starts with registration of a precharge all command and ends when t rp is met. once t rp is met, all banks will be in the idle state. 6. all states and se q uences not shown are illegal or reserved. 7. not bank-specific; re q uires that all banks are idle, and bursts are not in progress. 8. may or may not be bank-specific; if multiple banks are to be precharged, each must be in a valid state for precharging. 9. not bank-specific; burst terminate affects the most recent read burst, regardless of bank. 10. reads or writes listed in the command/actio n column include reads or writes with auto precharge enabled and reads or writ es with auto pr echarge disabled. 11. re q uires appropriate dm masking. 12. a write command may be appl ied after the completion of the read burst; otherwise, a burst terminate must be used to end the read burst prior to asserting a write com- mand. notes: 1. this table applies when cke n-1 was high and cke n is high (see table 33 on page 47) and after t xsnr has been met (if the previous state was self refresh). table 31: truth table 4 ? current state bank n ? command to bank m notes: 1?6 apply to the entire table; notes appear on page 45 current state cs# ras# cas# we# command/action notes any hxxx deselect (nop/continue previous operation) l hhh no operation (nop/continue previous operation) idle xxxx any command otherwise allowed to bank m row activating, active, or precharging llhh active (select and activate row) lhlh read (select column and start read burst) 7 lhl l write (select column and start write burst) 7 llhl precharge read (auto precharge disabled) llhh active (select and activate row) lhlh read (select column and start new read burst) 7 lhl l write (select column and start write burst) 7, 9 llhl precharge write (auto precharge disabled) llhh active (select and activate row) lhlh read (select column and start read burst) 7, 8 lhl l write (select column and start new write burst) 7 llhl precharge read (with auto- precharge) llhh active (select and activate row) lhlh read (select column and start new read burst) 7 lhl l write (select column and start write burst) 7, 9 llhl precharge write (with auto- precharge) llhh active (select and activate row) lhlh read (select column and start read burst) 7 lhl l write (select column and start new write burst) 7 llhl precharge
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 46 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram commands 2. this table describes alternate bank operation, except where noted (that is, the current state is for bank n , and the commands shown are those allowed to be issued to bank m , assuming that bank m is in such a state that the given comma nd is allowable). exceptions are covered in the notes below. 3. current state definitions: ? idle: the bank has been precharged, and t rp has been met. ? row active: a row in the bank has been activated, and t rcd has been met. no data bursts/accesses and no regist er accesses are in progress. ? read: a read burst has been initiated, wi th auto precharge disabled, and has not yet terminated or been terminated. ? write: a write burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. ? read with auto precharge enabled: see note 3a below. ? write with auto precharge enabled: see note 3a below. a. the read with auto precha rge enabled or write with au to precharge enabled states can each be broken into two parts: the ac cess period and the pr echarge period. for read with auto precharge, the precharge pe riod is defined as if the same burst was executed with auto precharg e disabled and then followed with the earliest possible precharge command that still accesses all of the data in the bu rst. for write with auto precharge, the precha rge period begins when t wr ends, with t wr measured as if auto precharge was disabled. the access pe riod starts with registration of the com- mand and ends where th e precharge period (or t rp) begins. this device supports concurrent auto precharge such that when a read with au to precharge is enabled or a write with auto precharge is enabled, an y command to other banks is allowed, as long as that command does not interrupt the read or wr ite data transfer already in process. in either case, all other related limitations apply (for example, contention between read data and write data must be avoided). b. the minimum delay from a read or wri te command with auto precharge enabled, to a command to a different ba nk is summarized in table 32. 4. auto refresh and lmr commands may only be issued when all banks are idle. 5. a burst terminate command cannot be issued to another bank; it applies to the bank represented by the current state only. 6. all states and se q uences not shown are illegal or reserved. 7. reads or writes listed in the ?command/action? column in clude reads or writes with auto precharge enabled and reads or wr ites with auto precharge disabled. 8. re q uires appropriate dm masking. 9. a write command may be appl ied after the completion of the read burst; otherwise, a burst terminate must be used to end the read burst prior to asserting a write com- mand. table 32: command delays cl ru = cl rounded up to the next integer from command to command minimum delay with concurrent auto precharge write with auto precharge read or read with auto precharge [1 + (bl/2)] t ck + t wtr write or write with auto precharge (bl/2) t ck precharge 1 t ck active 1 t ck read with auto precharge read or read with auto precharge (bl/2) t ck write or write with auto precharge [cl ru + (bl/2)] t ck precharge 1 t ck active 1 t ck
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 47 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram commands notes: 1. cke n is the logic state of cke at clock edge n ; cke n-1 was the state of cke at the previous clock edge. 2. current state is the state of the ddr sdram immediately prior to clock edge n . 3. command n is the command registered at clock edge n , and action n is a result of com- mand n . 4. all states and se q uences not shown are illegal or reserved. 5. cke must not drop low during a column acce ss. for a read, this means cke must stay high until after the read postamble time ( t rpst); for a write, cke must stay high until the write recovery time ( t wr) has been met. 6. once initialized, including during self refresh mode, v ref must be powered within the spec- ified range. 7. upon exit of the self refresh mode, the d ll is automatically enabled. a minimum of 200 clock cycles is needed before applying a read command for th e dll to lock. deselect or nop commands should be i ssued on any clock edge s occurring during the t xsnr period. deselect the deselect function (cs# high) prevents new commands from being executed by the ddr sdram. the ddr sdram is effectively deselected. operations already in prog- ress are not affected. no operation (nop) the no operation (nop) command is used to instruct the selected ddr sdram to perform a nop (cs# is low with ras#, cas#, and we# are high). this prevents unwanted commands from being registered during idle or wait states. operations already in progress are not affected. load mode register (lmr) the mode registers are loaded via inputs a0?a n (see "register definition" on page 55). the lmr command can only be issued wh en all banks are idle, and a subsequent executable command cannot be issued until t mrd is met. table 33: truth table 5 ? cke notes 1?6 apply to the entire table; notes appear below cke n-1 cke n current state command n action n notes l l power-down x maintain power-down self refresh x maintain self refresh l h power-down deselect or nop exit power-down self refresh deselect or nop exit self refresh 7 h l all banks idle deselect or nop precharge power-down entry bank(s) active deselect or nop active power-down entry all banks idle auto refresh self refresh entry h h see table 28 on page 43
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 48 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram commands active (act) the active command is used to open (or activate) a row in a particular bank for a subsequent access, like a read or a write, as shown in figure 17. the value on the ba0, ba1 inputs selects the bank, and the address provided on inputs a0?a n selects the row. figure 17: activating a specific row in a specific bank cs # we# c a s # ra s # c ke a dd ress row hi g h ba0, ba1 bank c k c k# don ? t c are
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 49 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram commands read the read command is used to initiate a burst read access to an active row, as shown in figure 18 on page 49. the value on the ba0, ba1 inputs selects the bank, and the address provided on inputs a0?a i (where a i is the most significant column address bit for a given density and configuration, see table 2 on pa ge 2) selects the starting column location. figure 18: read command note: en ap = enable auto precha rge; disap=disableautoprecharge. cs # we# c a s # ra s # c ke a dd ress a10 ba0, ba1 hi g h c k c k# don ? t c are c ol di s ap en ap bank
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 50 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram commands write the write command is used to initiate a burst write access to an active row as shown in figure 19. the value on the ba0, ba1 inputs selects the bank, and the address provided on inputs a0?a i ( where a i is the most significant column address bit for a given density and configuration, see table 2 on page 2) selects the starting column location. figure 19: write command note: en ap = enable auto precharge; and dis ap = disable auto precharge. cs # we# c a s # ra s # c ke a10 ba0, ba1 hi g h c k c k# don ? t c are a dd ress c ol en ap di s ap bank
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 51 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram commands precharge (pre) the precharge command is used to deactivate the open row in a particular bank or the open row in all banks as shown in figure 20. the value on the ba0, ba1 inputs selects the bank, and the a10 input selects whether a single bank is precharged or whether all banks are precharged. figure 20: precharge command notes: 1. if a10 is high, bank address becomes ?don?t care.? burst terminate (bst) the burst terminate command is used to truncate read bursts (with auto precharge disabled). the most recently registered read command prior to the burst terminate command will be truncated, as shown in ?operations? on page 52. the open page from which the read bu rst was terminated remains open. auto refresh (ar) auto refresh is used during normal oper ation of the ddr sdram and is analogous to cas#-before-ras# (cbr) refresh in fp m/edo drams. this command is nonpersis- tent, so it must be issued each time a refresh is required. all banks must be idle before an auto refresh command is issued. self refresh the self refresh command can be used to re tain data in the ddr sdram, even if the rest of the system is powered down. the self refresh command is initiated like an auto refresh command except cke is disabled (low). self refresh is not supported on automotive temperature (at) devices. cs # we# c a s # ra s # c ke a10 ba0, ba1 hi g h a dd ress c k c k# don ? t c are bank1 all b anks one b ank
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 52 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations operations initialization prior to normal operation, ddr sdrams must be powered up and initialized in a predefined manner. operational procedures, other than those specified, may result in undefined operation. to ensure device operation, the dram must be initialized as described in the following steps: 1. simultaneously apply power to v dd and v dd q. 2. apply v ref and then v tt power. v tt must be applied after v dd q to avoid device latch- up, which may cause permanent damage to the device. except for cke, inputs are not recognized as valid until after v ref is applied. 3. assert and hold cke at a lvcmos logic low. maintaining an lvcmos low level on cke during power-up is required to ensure that the dq and dqs outputs will be in the high-z state, where they will remain un til driven in normal operation (by a read access). 4. provide stable clock signals. 5. wait at least 200s. 6. bring cke high, and provide at least one nop or deselect command. at this point, the cke input changes from a lvcmos input to a sstl_2 input only and will remain a sstl_2 input unless a power cycle occurs. 7. perform a precharge all command. 8. wait at least t rp time; during this time nops or deselect commands must be given. 9. using the lmr command, program the extended mode register (e0 = 0 to enable the dll and e1 = 0 for normal drive; or e1 = 1 for reduced drive and e2?e n must be set to 0 [where n = most significant bit]). 10. wait at least t mrd time; only nops or deselect commands are allowed. 11. using the lmr command, program the mode register to set operating parameters and to reset the dll. at least 200 clock cy cles are required between a dll reset and any read command. 12. wait at least t mrd time; only nops or deselect commands are allowed. 13. issue a precharge all command. 14. wait at least t rp time; only nops or deselect commands are allowed. 15. issue an auto refresh command. this may be moved prior to step 13. 16. wait at least t rfc time; only nops or deselect commands are allowed. 17. issue an auto refresh command. this may be moved prior to step 13. 18. wait at least t rfc time; only nops or deselect commands are allowed. 19. although not required by the micron device, jedec requires an lmr command to clear the dll bit (set m8 = 0). if an lm r command is issued, the same operating parameters should be utilized as in step 11. 20. wait at least t mrd time; only nops or deselect commands are supported. 21. at this point the dram is ready for any va lid command. at least 200 clock cycles with cke high are required between step 11 (dll reset) and any read command.
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 53 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 21: initialization flow diagram v dd an d v dd q ramp apply v ref an d v tt c ke must b e lv c mo s low apply sta b le c lo c ks brin g c ke hi g h with a nop c omman d wait at least 200s pre c har g e all assert nop or de s ele c t for t rp time c onfi g ure exten d e d mo d e re g ister c onfi g ure loa d mo d e re g ister an d reset dll assert nop or de s ele c t for t mrd time assert nop or de s ele c t for t mrd time pre c har g e all issue auto refre s h c omman d assert nop or de s ele c t for t rf c time optional lmr c omman d to c lear dll b it assert nop or de s ele c t for t mrd time dram is rea d y for any vali d c omman d s tep 1 2 3 4 5 6 7 8 9 1 0 11 1 2 1 3 1 4 1 5 16 1 7 1 8 1 9 20 2 1 assert nop or de s ele c t c omman d s for t rf c issue auto refre s h c omman d assert nop or de s ele c t for t rp time
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 54 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 22: initialization timing diagram notes: 1. v tt is not applied directly to the device; however, t vtd 0 to avoid device latch-up. v dd q, v tt , and v ref v dd + 0.3v. alternatively, v tt may be 1.35v maximum during power-up, even if v dd /v dd q are 0v, provided a minimum of 42 of series resistance is used between the v tt supply and the input pin. once initialized, v ref must always be powered within the specified range. 2. although not re q uired by the micron device, jedec specifies issuing another lmr command (a8 = 0) prior to activating any bank. if an other lmr command is issued, the same, previ- ously issued operating parameters must be used. 3. the two auto refresh command s at td0 and te0 may be applied following the lmr com- mand at ta0. 4. t mrd is re q uired before any command can be applied (during mrd time only nops or deselects are allowed), and 200 cycles of ck are re q uired before a read command can be issued. 5. while programming the operating para meters, reset the dll with a8 = 1. t vtd 1 cke lvcmos low level dq ba0, ba1 200 cycles of ck4 load extended mode register load mode register5 t mrd t mrd t rp t rfc t rfc t is power-up: v dd and ck stable t = 200s high-z t ih dm dqs high-z address ra a10 all banks ck ck# t ch t cl t ck v tt 1 v ref v dd v dd q command lmr nop pre lmr ar ar act 2 t is t ih ba0 = 1 ba1 = 0 t is t ih t is t ih ba0 = 0 ba1 = 0 t is t ih ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) code code t is t ih code code 3 pre all banks t is t ih t0 t1 ta0 tb0 tc0 td0 te0 tf0 ( ) ( ) don?t care ba ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) t rp ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ra indicates a break in time scale
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 55 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations register definition mode register the mode register is used to define the specific ddr sdram mode of operation. this definition includes the selection of a burst length, a burst type, a cas latency, and an operating mode, as shown in figure 23. the mode register is programmed via the lmr command (with ba0=0 and ba1=0) and will re tain the stored information until it is programmed again or until the device loses power (except for bit a8, which is self- clearing). reprogramming the mode register will not alter the contents of the memory, provided it is performed correctly. the mode register mu st be loaded (reloaded) when all banks are idle and no bursts are in progress, and the co ntroller must wait the specified time before initiating the subsequent operat ion. violating either of these requirements will result in unspecified operation. mode register bits a0?a2 specify the burst le ngth, a3 specifies the type of burst (sequen- tial or interleaved), a4?a6 sp ecify the cas latency, and a7?a n specify the operating mode. figure 23: mode register definition notes: 1. n is the most significant row a ddress bit from table 2 on page 2. burst type se q uential interleaved cas latency reserved reserved 2 3 (-5b only) reserved reserved 2.5 reserved burst length cas latency bt 0 a9 a7 a6 a5 a4 a3 a8 a2 a1 a0 mode register (mx) address bus 976543 8 210 m3 0 1 m4 0 1 0 1 0 1 0 1 m5 0 0 1 1 0 0 1 1 m6 0 0 0 0 1 1 1 1 operating mode . . . a n ba0 ba1 . . . n 1 n + 1 0 n + 2 operating mode normal operation normal operation/reset dll all other states reserved m 8 0 1 ? m9 0 0 ? . . . 0 0 ? m n 0 0 ? m7 0 0 ? m6?m0 valid valid ? burst length reserved 2 4 8 reserved reserved reserved reserved m0 0 1 0 1 0 1 0 1 m1 0 0 1 1 0 0 1 1 m2 0 0 0 0 1 1 1 1 m n + 1 0 1 0 1 mode register definition base mode register extended mode register reserved reserved m n + 2 0 0 1 1
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 56 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations burst length (bl) read and write accesses to the ddr sdram are burst oriented, with the burst length being programmable for both read and write bursts, as shown in figure 23 on page 55. the burst length determines the ma ximum number of column locations that can be accessed for a given read or write command. bl = 2, bl = 4, or bl = 8 locations are available for both the sequential and the interleaved burst types. reserved states should not be used, as unknown operation or incompatibility with future versions may result. when a read or write command is issued, a block of columns equal to the burst length is effectively selected. all accesses for that burst take place within this block? meaning that the burst will wrap within the bl ock if a boundary is reached. the block is uniquely selected by a1?a i when bl = 2, by a2?a i when bl = 4, and by a3?a i when bl = 8 (where a i is the most significant column address bit for a given configuration). the remaining (least significant) address bit(s) is (are) used to select the starting location within the block. for example: for bl = 8, a3?a i select the eight-data-element block; a0? a2 select the first ac cess within the block. burst type accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit m3. the ordering of accesses within a burst is de termined by the burst length, the burst type, and the starting column address, as shown in table 34. table 34: burst definition burst length starting column address order of accesses within a burst type = sequential type = interleaved 2?? a0 ?? ??0 0-1 0-1 ??1 1-0 1-0 4? a1 a0 ?? ? 0 0 0-1-2-3 0-1-2-3 ? 0 1 1-2-3-0 1-0-3-2 ? 1 0 2-3-0-1 2-3-0-1 ? 1 1 3-0-1-2 3-2-1-0 8 a2 a1 a0 ?? 0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3 1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2 1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1 1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 57 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations cas latency (cl) the cl is the delay, in clock cycles, between the registration of a read command and the availability of the first bit of output data . the latency can be set to 2, 2.5, or 3 (-5b only) clocks, as shown in figure 24. reserved states should not be used, as unknown operation or incompatibility with future versions may result. if a read command is registered at clock edge n , and the latency is m clocks, the data will be available nominally coincident with clock edge n + m . table 35 on page 58 indi- cates the operating frequencies at which each cl setting can be used. figure 24: cas latency note: bl = 4 in the cases s hown; shown with nominal t ac, t dqsck, and t dqsq. c k c k# c omman d dq dq s c l = 2 read nop nop nop read nop nop nop c k c k# c omman d dq dq s c l = 2.5 t0 t1 t2 t2n t3 t3n t0 t1 t2 t2n t3 t3n don ? t c are transitionin g data read nop nop nop c k c k# c omman d dq dq s c l = 3 t0 t1 t2 t3 t3n
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 58 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations operating mode the normal operating mode is selected by issuing an lmr command with bits a7?a n each set to zero and bits a0?a6 set to the desired values. a dll reset is initiated by issuing an lmr command with bits a7 and a9?a n each set to zero, bit a8 set to one, and bits a0?a6 set to the desired values. although not required by the micron device, jedec specifications recommend that an lmr comm and resetting the dll should always be followed by an lmr command selecting normal operating mode. all other combinations of values for a7?a n are reserved for future use and/or test modes. test modes and reserved states should not be used, as unknown operation or incompatibility with future versions may result. extended mode register the extended mode register controls functions beyond those controlled by the mode register; these additional functions are dll enable/disable and output drive strength. these functions are controlled via the bits shown in figure 25 on page 59. the extended mode register is programmed via the lmr command to the mode register (with ba0 = 1 and ba1 = 0) and will retain the stored info rmation until it is programmed again or until the device loses power. the enabling of the dll should always be followed by an lmr command to the mode register (ba0/ba1 = 0) to reset the dll. the extended mode register must be loaded when all banks are idle and no bursts are in progress, and the controller must wait the specified time before initiating any subsequent operation. violating either requirement could result in an unspecified operation. output drive strength the normal drive strength for all outputs is specified to be sstl_2, class ii. the design revision f and k devices support a programmab le option for reduced drive. this option is intended for the support of the lighter load and/or point-to-point environments. the selection of the reduced drive strength will alter the dq and dqs pins from sstl_2, class ii drive strength to a reduced drive st rength, which is approximately 54% of the sstl_2, class ii drive strength. dll enable/disable when the part is running without the dll enab led, device functionality may be altered. the dll must be enabled for normal operation. dll enable is required during power- up initialization and upon returning to norm al operation after having disabled the dll for the purpose of debug or evaluation (when the device exits self refresh mode, the dll is enabled automatically). anytime the dll is enabled, 200 clock cycles with cke high must occur before a read command can be issued. table 35: cas latency speed allowable operating clock frequency (mhz) cl = 2 cl = 2.5 cl = 3 -5b 75 f 133 75 f 167 133 f 200 -6/-6t 75 f 133 75 f 167 ? -75e 75 f 133 75 f 133 ? -75z 75 f 133 75 f 133 ? -75 75 f 100 75 f 133 ?
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 59 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 25: extended mode register definition notes: 1. n is the most significant row addr ess bit from table 2 on page 2. 2. the reduced drive strength option is available only on design revision f and k. 3. the qfc# option is not supported. active after a row is opened with an active command, a read or write command may be issued to that row, subject to the t rcd specification. t rcd (min) should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the active command on which a read or write command can be entered. for example, a t rcd specification of 20ns with a 133 mhz clock (7.5ns period) results in 2.7 clocks rounded to 3. this is reflected in figure 26 on page 60, which covers any case where 2 < t rcd (min)/ t ck 3 (figure 26 also shows the same case for t rrd; the same procedure is used to convert other specification limits from time units to clock cycles). a row remains active (or open) for accesses until a precharge command is issued to that bank. a precharge command must be issued before opening a different row in the same bank. a subsequent active command to a different row in the same bank can only be issued after the previous active row has been ?closed? (precharged). the minimum time interval between successive active comma nds to the same bank is defined by t rc. a subsequent active command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. the minimum time interval between successive active co mmands to different banks is defined by t rrd. operating mode reserved reserved e3 0 ? e4 0 ? e1, e0 valid ? dll enable disable a9 a7 a6 a5 a4 a3 a8 a2 a1 a0 extended mode register (ex) address bus 976543 8 21 0 1 e0 0 1 drive strength normal reduced e1 2 operating mode . . . a n ba1 ba0 . . . n 1 n + 1 n + 2 e6 0 ? e7 0 ? e 8 0 ? e9 0 ? e5 0 ? . . . 0 ? e n 0 ? ds e2 3 0 ? m n + 1 0 1 0 1 mode register definition base mode register extended mode register reserved reserved m n + 2 0 0 1 1 dll 0 1 0
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 60 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 26: example: meeting t rcd ( t rrd) min when 2 < t rcd ( t rrd) min/ t ck 3 read during the read command, the value on input a10 determines whether or not auto precharge is used. if auto precharge is selected, the row being accessed will be precharged at the end of the read burst; if auto precharge is not selected, the row will remain open for subsequent accesses. note: for the read commands used in the following illustrations, auto precharge is dis- abled. during read bursts, the valid data-out elem ent from the starting column address will be available following the cl after the read command. each subsequent data-out element will be valid nominally at the next positive or negative clock edge (that is, at the next crossing of ck and ck#). figure 27 on page 62 shows the general timing for each possible cl setting. dqs is driven by th e ddr sdram along with output data. the initial low state on dqs is known as the re ad preamble; the low state coincident with the last data-out element is known as the read postamble. upon completion of a burst, assuming no ot her commands have been initiated, the dq will go high-z. detailed explanations of t dqsq (valid data-out skew), t qh (data-out window hold), and the valid data window are depicted in figure 35 on page 70 and figure 36 on page 71. detailed explanations of t dqsck (dqs transition skew to ck) and t ac (data-out transition skew to ck) are depicted in figure 37 on page 72. data from any read burst may be concatenat ed or truncated with data from a subse- quent read command. in either case, a contin uous flow of data can be maintained. the first data element from the new burst follows either the last element of a completed burst or the last desired data element of a longer burst which is being truncated. the new read command should be issued x cycles after the first read command, where x equals the number of desired data elem ent pairs (pairs are required by the 2 n -prefetch architecture). this is shown in figure 28 on page 63. a read command can be initiated on any clock cycle following a previous read command. nonconsecutive read data is illustrated in figure 29 on page 64. full-speed random read accesses within a page (or pages) can be performed, as shown in figure 30 on page 65. c omman d ba0, ba1 a c ta c t nop t rrd t r c d c k c k# bank x bank y a dd ress row row nop rd/wr nop bank y c ol nop t0 t1 t2 t3 t4 t5 t 6 t7 don ? t c are nop
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 61 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations data from any read burst may be truncated with a burst terminate command, as shown in figure 31 on page 66. the burst terminate latency is equal to the cl, that is, the burst terminate command should be issued x cycles after the read command where x equals the number of desired data element pairs (pairs are required by the 2 n -prefetch architecture). data from any read burst must be complete d or truncated before a subsequent write command can be issued. if truncation is necessary, the burst terminate command must be used, as shown in figure 32 on page 67. the t dqss (nom) case is shown; the t dqss (max) case has a longer bus idle time. ( t dqss [min] and t dqss [max] are defined in the section on writes.) a read bu rst may be followed by, or truncated with, a precharge command to the same bank provided that auto precharge was not acti- vated. the precharge command should be issued x cycles after the read command, where x equals the number of desired data element pairs (pairs are required by the 2 n -prefetch architecture). this is shown in figure 33 on page 68. following the precharge command, a subsequent command to the sa me bank cannot be issued until both t ras and t rp have been met. part of the row precharge time is hidden during the access of the last data elements.
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 62 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 27: read burst notes: 1. do n = data-out from column n . 2. bl = 4. 3. three subse q uent elements of data-out appear in the programmed order following do n . 4. shown with nominal t ac, t dqsck, and t dqsq. read nop nop nop nop nop read nop nop nop nop nop cl = 2 cl = 2.5 do n do n t0 t1 t2 t3 t2n t3n t4 t5 t0 t1 t2 t3 t2n t3n t4 t5 read nop nop nop nop nop cl = 3 do n t0 t1 t2 t3 t4n t3n t4 t5 bank a , col n bank a , col n bank a , col n command address dqs dq ck# ck command address dqs dq ck# ck command address dqs dq ck# ck transitioning data don?t care
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 63 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 28: consecutive read bursts notes: 1. do n (or b ) = data-out from column n (or column b ). 2. bl = 4 or bl = 8 (if bl = 4, the bursts are concatenated; if bl = 8, the second burst interrupts the first). 3. three subse q uent elements of data-out appear in the programmed order following do n. 4. three (or seven) subse q uent elements of data-out appear in the programmed order follow- ing do b. 5. shown with nominal t ac, t dqsck, and t dqsq. 6. example applies only when read co mmands are issued to same device. read nop read nop nop nop read nop read nop nop nop cl = 2 cl = 2.5 do n do b do n do b t0 t1 t2 t3 t2n t3n t4 t5 t4n t5n t0 t1 t2 t3 t2n t3n t4 t5 t4n t5n read nop read nop nop nop cl = 3 do n do b t0 t1 t2 t3 t3n t4 t5 t4n t5n bank, col n bank, col b bank, col n bank, col b bank, col n bank, col b command address dqs dq ck# ck command address dqs dq ck# ck command address dqs dq ck# ck transitioning data don?t care
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 64 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 29: nonconsecutive read bursts notes: 1. do n (or b ) = data-out from column n (or column b ). 2. bl = 4 or bl = 8 (if bl = 4, the bursts are concatenated; if bl = 8, the second burst interrupts the first). 3. three subse q uent elements of data-out appear in the programmed order following do n . 4. three (or seven) subse q uent elements of data-out appear in the programmed order follow- ing do b . 5. shown with nominal t ac, t dqsck, and t dqsq. read nop nop nop nop nop read c l = 2 c l = 2.5 do n t0 t1 t2 t3 t2n t3n t4 t5 t5n t 6 read nop nop nop nop nop read t0 t1 t2 t3 t2n t3n t4 t5 t5n t 6 do b do n do b c l = 3 read nop nop nop nop nop read t0 t1 t2 t3 t3n t4 t5 t 6 do n do b t4n bank, c ol n bank, c ol b bank, c ol n bank, c ol b bank, c ol n bank, c ol b c omman d a dd ress dq s dq c k# c k c omman d a dd ress dq s dq c k# c k c omman d a dd ress dq s dq c k# c k transitionin g data don ? t c are
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 65 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 30: random read accesses notes: 1. do n (or x or b or g ) = data-out from column n (or column x or column b or column g ). 2. bl = 2, bl = 4, or bl = 8 (if bl = 4 or bl = 8, the following burst interrupts the previous). 3. n ', x ', b ', or g ' indicate the next data-out following do n , do x , do b , or do g , respectively . 4. reads are to an active row in any bank . 5. shown with nominal t ac, t dqsck, and t dqsq. read read read nop nop read c l = 2 c l = 2.5 do n do x' do g do n' do b do x do b' do n do x' do n' do b do x do b' t0 t1 t2 t3 t2n t3n t4 t5 t4n t5n read read read nop nop read t0 t1 t2 t3 t2n t3n t4 t5 t4n t5n c l = 3 do n do x' do n' do b do x do b' read read read nop nop read t0 t1 t2 t3 t3n t4 t5 t4n t5n bank, c ol n bank, c ol b bank, c ol x bank, c ol g bank, c ol n bank, c ol b bank, c ol x bank, c ol g bank, c ol n bank, c ol b bank, c ol x bank, c ol g c omman d a dd ress dq s dq c k# c k c omman d a dd ress dq s dq c k# c k c omman d a dd ress dq s dq c k# c k transitionin g data don ? t c are
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 66 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 31: terminating a read burst notes: 1. page remains open. 2. do n = data-out from column n . 3. bl = 4. 4. subse q uent element of data-out appears in the programmed order following do n . 5. shown with nominal t ac, t dqsck, and t dqsq. read nop nop nop nop bank a , col n read nop nop nop nop bank a , col n cl = 2 cl = 2.5 do n do n t0 t1 t2 t3 t2n t4 t5 t0 t1 t2 t3 t2n t4 t5 read nop nop nop nop bank a , col n cl = 3 do n t0 t1 t2 t3 t3n t4 t5 bst 1 bst 1 bst 1 command address dqs dq ck# ck command address dqs dq ck# ck command address dqs dq ck# ck transitioning data don?t care
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 67 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 32: read-to-write notes: 1. page remains open. 2. do n = data-out from column n ; di b = data-in from column b . 3. bl = 4 (applies for bursts of 8 as well; if bl = 2, the burst command shown can be nop). 4. one subse q uent element of data-out appears in the programmed order following do n. 5. data-in elements are applied following di b in the programmed order . 6. shown with nominal t ac, t dqsck, and t dqsq. read b s t 1 nop nop nop bank, c ol n write bank, c ol b t0 t1 t2 t3 t2n t4 t5 t4n t5n t (nom) dq ss di b read b s t 1 nop write nop bank a, c ol n nop t0 t1 t2 t3 t3n t4 t5 t5n do n do n t (nom) dq ss read nop nop bank, c ol n write bank, c ol b t0 t1 t2 t3 t2n t4 t5 t5n t (nom) dq ss di b do n nop c l = 2.5 c l = 2 t3n c l = 3 di b b s t 1 c omman d a dd ress dq s dq c k# c k c omman d a dd ress dq s dq c k# c k c omman d a dd ress dq s dq c k# c k transitionin g data don ? t c are dm dm dm
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 68 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 33: read-to-precharge notes: 1. provided t ras (min) is met, a read command with auto precharge enabled would cause a precharge to be performed at x number of clock cycles after the read command, where x =bl/2. 2. do n = data-out from column n . 3. bl = 4 or an interrupted burst of 8. 4. three subse q uent elements of data-out appear in the programmed order following do n . 5. shown with nominal t ac, t dqsck, and t dqsq. 6. read-to-precharge e q uals two clocks, which allows two da ta pairs of data-out; it is also assumed that t ras (min) is met. 7. an active command to the same bank is only allowed if t rc (min) is met. read nop pre nop nop a c t bank a , c ol n bank a , ( a or all ) bank a , row read nop pre nop nop a c t bank a , c ol n c l = 2 t rp t rp c l = 2.5 do n do n t0 t1 t2 t3 t2n t3n t4 t5 t0 t1 t2 t3 t2n t3n t4 t5 bank a , ( a or all ) bank a , row read nop pre nop nop a c t bank a , c ol n t rp c l = 3 do n t0 t1 t2 t3 t4n t3n t4 t5 bank a , ( a or all ) bank a , row c omman d a dd ress dq s dq c k# c k c omman d a dd ress dq s dq c k# c k c omman d a dd ress dq s dq c k# c k transitionin g data don ? t c are
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 69 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 34: bank read ? without auto precharge notes: 1. nop commands are shown for ease of illus tration; other commands may be valid at these times. 2. bl = 4. 3. the precharge command can only be applied at t5 if t ras (min) is met. 4. disable auto precharge. 5. ?don?t care? if a10 is high at t5. 6. do n (or b ) = data-out from column n (or column b ); subse q uent elements are provided in the programmed order. 7. refer to figure 35 on page 70, figure 36 on page 71, and figure 37 on page 72 for detailed dqs and dq timing. ck ck# cke a10 ba0, ba1 t ck t ch t cl t is t is t ih t is t is t ih t ih t ih t is t ih t rcd t rc t rp cl = 2 dm t0 t1 t2 t3 t4 t5 t5n t6n t6 t7 t8 dqs case 1: t ac ( min) and t dqsck ( min) case 2: t ac ( max) and t dqsck ( max) dqs t rpre t rpre t rpst t rpst t dqsck ( min) t lz ( min) t ac ( min) t lz ( min) do n t hz ( max) t ac ( max) do n act col n bank x bank x act bank x t dqsck (max) nop 1 nop 1 nop 1 nop 1 nop 1 read 2 pre 3 4 bank x 5 t ras 3 row row row row dq dq command address transitioning data don?t care all banks one bank
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 70 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 35: x4, x8 data output timing ? t dqsq, t qh, and data valid window notes: 1. t hp is the lesser of t cl or t ch clock transition collectively when a bank is active. 2. t dqsq is derived at each dqs clock edge, is not cumulative over time, begins with dqs transition, and ends with th e last valid dq transition. 3. dq transitioning after dq s transition define the t dqsq window. dqs tr ansitions at t2 and t2n are an ?early dqs?; at t3, a ?nominal dqs?; an d at t3n, a ?late dqs?. 4. for a x4, only two dq apply. 5. t qh is derived from t hp: t qh = t hp - t qhs. 6. the data valid window is derived for each dqs transitions and is defined as t qh - t dqsq. dq (last d ata vali d ) dq 4 dq 4 dq 4 dq 4 dq 4 dq 4 dq s 3 dq (last d ata vali d ) dq (first d ata no lon g er vali d ) dq (first d ata no lon g er vali d ) all dq an d dq s c olle c tively 6 earliest si g nal transition latest si g nal transition t2 t2 t2 t2n t2n t2n t3 t3 t3 t3n t3n t3n c k c k# t1 t2 t3 t4 t2n t3n t qh 5 t hp 1 t hp 1 t hp 1 t qh 5 t qh 5 t hp 1 t hp 1 t hp 1 t qh 5 t dq s q 2 t dq s q 2 t dq s q 2 t dq s q 2 data vali d win d ow data vali d win d ow data vali d win d ow data vali d win d ow
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 71 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 36: x16 data output timing ? t dqsq, t qh, and data valid window notes: 1. t hp is the lesser of t cl or t ch clock transition collectively when a bank is active. 2. t dqsq is derived at each dqs clock edge, is not cumulative over time, begins with dqs transition, and ends with th e last valid dq transition. 3. dq transitioning after dq s transition define the t dqsq window. ldqs defines the lower byte, and udqs defines the upper byte. 4. dq0, dq1, dq2, dq3, dq4, dq5, dq6, or dq7. 5. t qh is derived from t hp: t qh = t hp - t qhs. 6. the data valid window is derive d for each dqs transition and is t qh - t dqsq. 7. dq8, dq9, dq10, d11, dq12, dq13, dq14, or dq15. dq (last d ata vali d ) 4 dq 4 dq 4 dq 4 dq 4 dq 4 dq 4 ldq s 3 dq (last d ata vali d ) 4 dq (first d ata no lon g er vali d ) 4 dq (first d ata no lon g er vali d ) 4 dq0?dq7 an d ldq s c olle c tively 6 t2 t2 t2 t2n t2n t2n t3 t3 t3 t3n t3n t3n c k c k# t1 t2 t3 t4 t2n t3n t qh 5 t qh 5 t dq s q 2 t dq s q 2 t dq s q 2 t dq s q 2 data vali d win d ow data vali d win d ow dq (last d ata vali d ) 7 dq 7 dq 7 dq 7 dq 7 dq 7 dq 7 udq s 3 dq (last d ata vali d ) 7 dq (first d ata no lon g er vali d ) 7 dq (first d ata no lon g er vali d ) 7 dq8?dq15 an d udq s c olle c tively 6 t2 t2 t2 t2n t2n t2n t3 t3 t3 t3n t3n t3n t qh 5 t qh 5 t qh 5 t qh 5 t dq s q 2 t dq s q 2 t dq s q 2 t dq s q 2 t hp 1 t hp 1 t hp 1 t hp 1 t hp 1 t hp 1 t qh 5 t qh 5 data vali d win d ow data vali d win d ow data vali d win d ow data vali d win d ow data vali d win d ow upper b yte lower b yte data vali d win d ow
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 72 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 37: data output timing ? t ac and t dqsck notes: 1. read command with cl = 2 issued at t0. 2. t dqsck is the dqs output window relative to ck and is the ?long term? component of the dqs skew. 3. dq transitioning after dq s transition define the t dqsq window. 4. all dq must transition by t dqsq after dqs transitions, regardless of t ac. 5. t ac is the dq output window relative to ck and is the ?long term? component of dq skew. 6. t lz (min) and t ac (min) are the first valid signal transitions. 7. t hz (max) and t ac (max) are the latest va lid signal transitions. write during a write command, the value on in put a10 determines whether or not auto precharge is used. if auto precharge is selected, the row being accessed will be precharged at the end of the write burst (after t wr time); if auto precharge is not selected, the row will remain open for subsequent accesses. input data appearing on the dq is written to the memory array subject to the dm input logic level appearing coincident with the data. if a given dm signal is registered low, the corresponding data will be written to memory. if the dm signal is registered high, the corresponding data inputs will be ignored, and a write will not be executed to that byte/column location. note: for the write commands used in the following illustrations, auto precharge is dis- abled. during write bursts, the first valid data-in element will be registered on the first rising edge of dqs following the write command, and subsequent data elements will be registered on successive edges of dqs. the low state on dqs between the write command and the first rising edge is known as the write preamble; the low state on dqs following the last data-in element is known as the write postamble. the time between the write command and th e first corresponding rising edge of dqs ( t dqss) is specified with a relatively wide ra nge (from 75% to 125% of one clock cycle). all of the write diagrams show the nominal case, and where the two extreme cases (that is, t dqss [min] and t dqss [max]) might not be intuitive; they have also been included. figure 38 on page 74 shows th e nominal case and the extremes of t dqss for bl = 4. upon completion of a burst, assuming no other commands have been initiated, the dq will remain high-z and any additional input data will be ignored. ck ck# dqs or ldqs/udqs 3 t1 t2 t3 t4 t5 t2n t3n t4n t5n t6 t rpst t lz (min) t dqsck 2 (max) t dqsck 2 (min) t dqsck 2 (max) t dqsck 2 (min) t hz (max) all dq values collectively 4 t ac 5 (min) t ac 5 (max) t lz (min) t hz (max) t2 t2 t2n t3n t4n t5n t2n t2n t3n t3n t4n t4n t5n t5n t3 t4 t4 t5 t5 t2 t3 t4 t5 t3 dq (last data valid) dq (first data valid) t0 1 t rpre
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 73 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations data for any write burst may be concatenat ed with or truncated with a subsequent write command. in either case, a continuous flow of input data can be maintained. the new write command can be issued on any positive edge of clock following the previous write command. the first data elem ent from the new burst is applied after either the last element of a completed burst or the last desired data element of a longer burst which is being truncated. the new write command should be issued x cycles after the first write command, where x equals the number of desired data element pairs (pairs are required by the 2 n -prefetch architecture). figure 39 on page 75 shows concatenated burs ts of 4. an example of nonconsecutive writes is shown in figure 40 on page 76. full-speed random write accesses within a page or pages can be performed as shown in figure 41 on page 76. data for any write burst may be followed by a subsequent read command. to follow a write without truncating the write burst, t wtr should be met, as shown in figure 42 on page 77. data for any write burst may be truncated by a subsequent read command, as shown in figure 43 on page 78. note that only the data-in pairs that are registered prior to the t wtr period are written to the internal array, and any subsequent da ta-in should be masked with dm, as shown in figure 44 on page 79. data for any write burst may be followed by a subsequent precharge command. to follow a write without truncating the write burst, t wr should be met, as shown in figure 45 on page 80. data for any write burst may be truncated by a subsequent precharge command, as shown in figure 46 on page 81 and figure 47 on page 82. only the data-in pairs regis- tered prior to the t wr period are written to the internal array; any subsequent data-in should be masked with dm, as shown in figures 46 and 47. after the precharge command, a subsequent command to th e same bank cannot be issued until t rp is met.
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 74 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 38: write burst notes: 1. di b = data-in for column b . 2. three subse q uent elements of data-in are applied in the programmed order following di b . 3. an uninterrupted burst of 4 is shown. 4. a10 is low with the write comm and (auto precharge is disabled). dqs t d q ss (max) t d q ss (nom) t d q ss (min) t dqss dm dq ck ck# command write nop nop address bank a , col b nop t0 t1 t2 t3 t2n dqs t dqss dm dq dqs dm dq di b di b di b don?t care transitioning data t dqss
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 75 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 39: consecutive write-to-write notes: 1. di b (or n ) = data-in from column b (or column n ). 2. three subse q uent elements of data-in are applied in the programmed order following di b . 3. three subse q uent elements of data-in are applied in the programmed order following di n . 4. an uninterrupted burst of 4 is shown. 5. each write command may be to any bank. address t d q ss (nom) ck ck# command write nop write nop nop bank, col b nop bank, col n t0 t1 t2 t3 t2n t4 t5 t4n t3n t1n dq dqs dm di n di b don?t care transitioning data t dqss
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 76 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 40: nonconsecutive write-to-write notes: 1. di b (or n ) = data-in from column b (or column n ). 2. three subse q uent elements of data-in are applied in the programmed order following di b . 3. three subse q uent elements of data-in are applied in the programmed order following di n . 4. an uninterrupted burst of 4 is shown . 5. each write command may be to any bank. figure 41: random write cycles notes: 1. di b (or x or n or a or g ) = data-in from column b (or column x , or column n , or column a , or column g ). 2. b ' , x ' , n ' , a ' or g ' indicate the next da ta-in following do b , do x , do n , do a , or do g , respectively. 3. programmed bl = 2, bl = 4, or bl = 8 in cases shown. 4. each write command may be to any bank. ck command write nop nop nop nop address bank, col b write bank, col n t0 t1 t2 t3 t2n t4 t5 t4n t1n t5n dq dqs dm di n di b t d q ss (nom) t dqss don?t care transitioning data ck# t dqss (nom) ck ck# command write write write write nop address bank, col b bank, col x bank, col n bank, col g write bank, col a t0 t1 t2 t3 t2n t4 t5 t4n t1n t3n t5n dq dqs dm di b di b ' di x di x ' di n di n ' di a di a ' di g di g ' don?t care transitioning data
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 77 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 42: write-to-read ? uninterrupting notes: 1. di b = data-in for column b ; do n = data-out for column n . 2. three subse q uent elements of data-in are applied in the programmed order following di b . 3. an uninterrupted burst of 4 is shown. 4. t wtr is referenced from the first positive ck edge after the last data-in pair. 5. the read and write commands are to the same device. however, the read and write commands may be to differen t devices, in which case t wtr is not re q uired, and the read command could be applied earlier. 6. a10 is low with the write comm and (auto precharge is disabled). t d q ss (nom) ck ck# command write nop nop read nop nop address bank a , col b bank a , col n nop t0 t1 t2 t3 t2n t4 t5 t1n t6 t6n t wtr cl = 2 dq dqs dm di b do n t dqss t d q ss (min) cl = 2 dq dqs dm di b do n t dqss t d q ss (max) cl = 2 dq dqs dm di b do n t dqss don?t care transitioning data
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 78 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 43: write-to-read ? interrupting notes: 1. di b = data-in for column b ; do n = data-out for column n . 2. an interrupted burst of 4 is show n; two data elements are written. 3. one subse q uent element of data-in is applied in the programmed order following di b . 4. t wtr is referenced from the first positive ck edge after the last data-in pair. 5. a10 is low with the write comm and (auto precharge is disabled). 6. dqs is re q uired at t2 and t2n (nominal case) to register dm. 7. if the burst of 8 is used, dm and dqs are re q uired at t3 and t3n because the read com- mand will not mask th ese two data elements. t d q ss (nom) ck ck# command write nop nop nop nop nop address bank a , col b bank a , col n read t0 t1 t2 t3 t2n t4 t5 t5n t1n t6 t6n t wtr cl = 2 dq dqs dm di b do n t d q ss (min) cl = 2 dq dqs dm di b t d q ss (max) cl = 2 dq dqs dm di b do n do n don?t care transitioning data t dqss t dqss t dqss t3n
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 79 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 44: write-to-read ? odd number of data, interrupting notes: 1. di b = data-in for column b ; do n = data-out for column n . 2. an interrupted burst of 4 is sh own; one data el ement is written. 3. t wtr is referenced from the first positive ck edge after the last desired data-in pair (not the last two data elements). 4. a10 is low with the write comm and (auto precharge is disabled). 5. dqs is re q uired at t1n, t2, and t2n (nominal case) to register dm. 6. if the burst of 8 is used, dm and dqs are re q uired at t3?t3n because the read command will not mask these data elements. t d q ss (nom) ck ck# command write nop nop nop nop nop address bank a , col b bank a , col n read t0 t1 t2 t3 t2n t4 t5 t1n t6 t6n t5n t wtr cl = 2 dq dqs dm di b do n t d q ss (min) cl = 2 dq dqs dm di b do n t d q ss (max) cl = 2 dq dqs dm di b do n don?t care transitioning data t dqss t dqss t dqss t3n
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 80 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 45: write-to-precharge ? uninterrupting notes: 1. di b = data-in for column b . 2. three subse q uent elements of data-in are applied in the programmed order following di b . 3. an uninterrupted burst of 4 is shown. 4. t wr is referenced from th e first positive ck edge af ter the last data-in pair. 5. the precharge and write commands are to the same device. however, the precharge and write commands may be to diff erent devices, in which case t wr is not re q uired, and the precharge command could be applied earlier. 6. a10 is low with the write comm and (auto precharge is disabled). t d q ss (nom) ck ck# command write nop nop nop nop address bank a , col b bank, ( a or all ) nop t0 t1 t2 t3 t2n t4 t5 t1n t6 t wr t rp dq dqs dm di b t d q ss (min) dq dqs dm di b t d q ss (max) dq dqs dm di b don?t care transitioning data t dqss t dqss t dqss pre
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 81 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 46: write-to-precharge ? interrupting notes: 1. di b = data-in for column b . 2. subse q uent element of data-in is applied in the programmed order following di b . 3. an interrupted burst of 8 is show n; two data elements are written. 4. t wr is referenced from th e first positive ck edge af ter the last data-in pair. 5. a10 is low with the write comm and (auto precharge is disabled). 6. dqs is re q uired at t4 and t4n (nominal case) to register dm. 7. if the burst of 4 is used, dqs and dm are not re q uired at t3, t3n, t4, and t4n. t dqss t d q ss (nom) ck ck# command write nop nop nop nop address bank a , col b bank, ( a or all ) nop t0 t1 t2 t3 t2n t4 t5 t1n t6 t wr t rp dq dqs dm di b t dqss t d q ss (min) dq dqs dm di b t dqss t d q ss (max) dq dqs dm di b don?t care transitioning data t3n t4n pre
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 82 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 47: write-to-precharge ? odd number of data, interrupting notes: 1. di b = data-in for column b . 2. an interrupted burst of 8 is sh own; one data el ement is written. 3. t wr is referenced from th e first positive ck edge af ter the last data-in pair. 4. a10 is low with the write comm and (auto precharge is disabled). 5. dqs is re q uired at t4 and t4n (nominal case) to register dm. 6. if the burst of 4 is used, dqs and dm are not re q uired at t3, t3n, t4, and t4n. t dqss t d q ss (nom) ck ck# command write nop nop nop nop address bank a , col b bank, ( a or all ) nop t0 t1 t2 t3 t2n t4 t5 t1n t6 t wr t rp dq dqs dm di b t dqss t d q ss (min) dq dqs dm t dqss t d q ss (max) dq dqs dm di b di b don?t care transitioning data t3n t4n pre
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 83 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 48: bank write ? without auto precharge notes: 1. nop commands are shown for ease of illus tration; other commands may be valid at these times. 2. bl = 4. 3. disable auto precharge. 4. ?don?t care? if a10 is high at t8. 5. di b = data-in from column b ; subse q uent elements are provided in the programmed order. 6. see figure 50 on page 85 for detailed dq timing. command nop 1 nop 1 nop 1 nop 1 nop 1 nop 1 write 2 3 bank x 4 dq 5 address row row ck ck# cke a10 ba0, ba1 t ck t ch t cl t is t is t ih t is t is t ih t ih t ih t is t ih t rcd t ras t rp t wr t0 t1 t2 t3 t4 t5 t5n t6 t7 t8 t4n act col n one bank all banks bank x pre bank x t dqsl t dqsh t wpst dqs dm di b t ds t dh t dqss (nom) t wpre t wpres don?t care transitioning data
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 84 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 49: write ? dm operation notes: 1. nop commands are shown for ease of illus tration; other commands may be valid at these times. 2. bl = 4. 3. disable auto precharge. 4. ?don?t care? if a10 is high at t8. 5. di b = data-in from column b ; subse q uent elements are provided in the programmed order. 6. see figure 50 on page 85 for detailed dq timing. command nop 1 nop 1 nop 1 nop 1 nop 1 nop 1 3 bank x 4 dq 5 write 2 address row row ck ck# cke a10 ba0, ba1 t ck t ch t cl t is t is t ih t is t is t ih t ih t ih t is t ih t rcd t ras t rp t wr t0 t1 t2 t3 t4 t5 t5n t6 t7 t8 t4n act col n one bank all banks bank x pre bank x t dqsl t dqsh t wpst dqs dm di b t ds t dh don?t care transitioning data t dqss (nom) t wpres t wpre
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 85 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 50: data input timing notes: 1. write command issued at t0. 2. t dsh (min) generally occurs during t dqss (min). 3. t dss (min) generally occurs during t dqss (max). 4. for x16, ldqs controls the lower byte and udqs controls the upper byte. 5. di b = data-in from column b . precharge the bank(s) will be available for a su bsequent row access a specified time ( t rp) after the precharge command is issued, except in the case of concurrent auto precharge. with concurrent auto precharge, a read or write command to a different bank is allowed as long as it does not interrupt the data transf er in the current bank and does not violate any other timing parameters. input a10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs ba0, ba1 select the bank. when all banks are to be precharged, ba0, ba1 are treated as ?don?t care.? once a bank has been precharged, it is in the idle state and must be activated prior to any read or write commands be ing issued to that bank. a precharge command will be treated as a nop if there is no open row in that bank (idle state), or if the previously open row is already in the process of precharging. auto precharge auto precharge is a feature which performs the same individual-bank precharge func- tion described above, but without requiring an explicit command. this is accomplished by using a10 to enable auto precharge in conjunction with a specific read or write command. a precharge of the bank/row that is addressed with the read or write command is automatically performed upon co mpletion of the read or write burst. auto precharge is either enabled or disa bled for each individual read or write command. this device supports concurrent auto precharge if the command to the other bank does not interrupt the data transfer to the current bank. auto precharge ensures that the precharge is in itiated at the earliest valid stage within a burst. this ?earliest valid stage? is determ ined as if an explicit precharge command was issued at the earliest possible time, without violating t ras (min), as described for each burst type in ?operations? on page 52. the user must not issue another command to the same bank until the precharge time ( t rp) is completed. t0 1 t dsh 2 t dsh 2 t dss 3 t dss 3 di b dqs t dqss t dqsh t wpst t dh t ds t dqsl dm dq ck ck# t1 t1n t2 t2n t3 don?t care transitioning data t wpre t wpres
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 86 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 51: bank read ? with auto precharge notes: 1. nop commands are shown for ease of illus tration; other commands may be valid at these times. 2. bl = 4. 3. the read command can only be applied at t3 if t rap is satisfied at t3. 4. enable auto precharge. 5. t rp starts only after t ras has been satisfied. 6. do n = data-out from column n; subse q uent elements are provided in the programmed order. 7. refer to figure 35 on page 70, figure 36 on page 71, and figure 37 on page 72 for detailed dqs and dq timing. nop 1 nop 1 nop 1 nop 1 nop 1 nop 1 read 2,3 4 t r c d, t rap 3 dq 6 dq 6 c omman d t rp 5 a dd ress t lz (min) row row row row c k c k# c ke a10 ba0, ba1 t c k t c h t c l t i s t i s t ih t i s t i s t ih t ih t ih i s ih t r c c l = 2 dm t0 t1 t2 t3 t4 t5 t5n t 6 n t 6 t7 t8 dq s c ase 1: t a c (min) an d t dq sc k (min) c ase 2: t a c ( max) an d t dq sc k ( max) dq s t rpre t rpre t rp s t t dq sc k ( min) t dq sc k ( max) t a c ( min) t lz ( min) do n t hz ( max) t a c ( max) do n a c t c ol n bank x bank x a c t bank x t ra s don ? t c are transitionin g data t rp s t
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 87 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations figure 52: bank write ? with auto precharge notes: 1. nop commands are shown for ease of illus tration; other commands may be valid at these times. 2. bl = 4. 3. enable auto precharge. 4. di n = data-out from column n ; subse q uent elements are provided in the programmed order. 5. see figure 50 on page 85 for detailed dq timing. auto refresh during auto refresh, the addressing is generated by the internal refresh controller. this makes the address bits a ?don?t care? during an auto refresh command. the ddr sdram requires auto refresh cycles at an average interval of t refi (max). to allow for improved efficiency in scheduling and switching between tasks, some flexi- bility in the absolute refresh interval is provided. a maximum of eight auto refresh commands can be posted to any given dd r sdram, meaning that the maximum abso- lute interval between any auto refres h command and the next auto refresh command is 9 t refi(= t refc). jedec specifications only support 8 t refi; micron specifications exceed the jedec requirement by one clock. this maximum absolute interval is to allow future support for dll updates, internal to the ddr sdram, to be restricted to auto refresh cycles, without allowing excessive drift in t ac between updates. command nop 1 nop 1 nop 1 nop 1 nop 1 nop 1 nop 1 write 2 3 dq 4 address row row ck ck# cke a10 ba0, ba1 t ck t ch t cl t is t is t ih t is t is t ih t ih t ih t is t ih t rcd t ras t rp t wr t0 t1 t2 t3 t4 t5 t5n t6 t7 t8 t4n act col n bank x bank x t dqsl t dqsh t wpst dqs dm di b t ds t dh t dqss (nom) don?t care transitioning data t wpres t wpre
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 88 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations although not a jedec requirement, to provide for future functionality features, cke must be active (high) during the auto refresh period. the auto refresh period begins when the auto refresh command is registered and ends t rfc later. figure 53: auto refresh mode notes: 1. nop commands are shown for ease of illus tration; other valid commands may be possible at these times. cke must be active during clock-positive transitions. 2. nop or command inhibit are the on ly commands allowed until after t rfc time; cke must be active during cloc k-positive transitions. 3. the second auto refresh is not re q uired and is only shown as an example of two back-to- back auto refresh commands. 4. ?don?t care? if a10 is high at this point; a10 must be high if more than one bank is active (that is, must precharge all active banks). 5. dm, dq, and dqs signals are all ?don?t care?/high-z for the operations shown. self refresh when in the self refresh mode, the ddr sdram retains data without external clocking. the dll is automatically disabled upon en tering self refresh and is automatically enabled upon exiting self refresh (a dll reset and 200 clock cycles must then occur before a read command can be issued). in put signals except cke are ?don?t care? during self refresh. v ref voltage is also required for the full duration of self refresh. the procedure for exiting self refresh requires a sequence of commands. first, ck and ck# must be stable prior to cke goin g back high. once cke is high, the ddr sdram must have nop commands issued for t xsnr because time is required for the completion of any internal refresh in progress. a simple algorithm for meeting both refresh and dll requirements is to apply nops for t xsrd time, then a dll reset (via c k c k# c omman d nop 1 vali d vali d nop 1 nop 1 pre c ke ra a dd ress a10 ba0, ba1 bank(s) 4 ba ar nop 1,2 ar 3 nop 1,2 a c t nop 1 one b ank all b anks c k t c h t c l t i s t i s t ih t ih t i s t ih ra dq 5 dm 5 dq s 5 t rf c t rp t rf c t0 t1 t2 t3 t4 ta0 t b 0 ta1 t b 1t b 2 don ? t c are ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 89 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations the extended mode register) and nops for 200 additional clock cycles before applying a read. any command other than a read can be performed t xsnr (min) after the dll reset. nop or deselect commands must be issued during the t xsnr (min) time. self refresh is not supported on automotive tempature (at) devices. figure 54: self refresh mode notes: 1. clock must be stable until after the se lf refresh command has been registered. a change in clock fre q uency is allowed before ta0, provided it is within the specified t ck limits. regardless, the clock must be st able before exiting self refresh mode?that is, the clock must be cycling within specifications by ta0. 2. nops are interchangeable with deselect commands. 3. auto refresh is not re q uired at this point but is highly recommended. 4. device must be in the all banks idle sta te prior to entering self refresh mode. 5. t xsnr is re q uired before any non-read command can be applied; that is only nop or dese- lect commands are allowed until tb1. 6. t xsrd (200 cycles of a valid clock with cke = high) is re q uired before any read command can be applied. 7. as a general rule, any time se lf refresh mode is exited, the dram may not re-enter the self refresh mode until all rows have been re freshed via the auto refresh command at the distributed refresh rate, t refi, or faster. however, the self refresh mode may be re-entered anytime after exiting if each of th e following conditions is met: 7a. the dram had been in the self refresh mode for a minimum of 200 ms prior to exiting. 7b. t xsnr and t xsrd are not violated. 7c. at least two auto refresh comma nds are performed during each t refi interval while the dram remains out of self refresh mode. 8. if the clock fre q uency is changed during self refresh mode, a dll reset is re q uired upon exit. 9. once the device is initialized, v ref must always be powered within specified range. c k 1 c k# c omman d 2 nop ar a dd ress c ke dq dm dq s nop t rp 4 t c h t c l t c k t i s t i s t ih t i s t ih t i s enter self refresh mo d e 7 exit self refresh mo d e 7 t0 t1 1 ta1 don ? t c are ta0 1 t x s rd 6 ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) nop vali d 3 vali d ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) t x s nr 5 ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ta2 t b 1t b 2t c 1 vali d vali d vali d t i s t ih ( ) ( ) ( ) ( ) vali d ( ) ( ) ( ) ( ) ( ) ( )
pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 90 ?2003 micron technology, inc. all rights reserved. 256mb: x4, x8, x16 ddr sdram operations power-down (cke not active) unlike sdr sdrams, ddr sdrams require cke to be active at all time s an access is in progress, from the issuing of a read or write command, until completion of the access. thus a clock suspend is not supported. for reads, an access completion is defined when the read postamble is satisfied; for writes, when the write recovery time ( t wr) is satisfied. power-down, as shown in figure 55 on page 91, is entered when cke is registered low and all criteria in table 33 on page 47 are met. if power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when a row is active in any bank, this mode is refe rred to as active powe r-down. entering power- down deactivates the input and output bu ffers, excluding ck, ck#, and cke. for maximum power savings, the dll is frozen during precharge power-down mode. exiting power-down requires the device to be at the same voltage and frequency as when it entered power-down. however, power-down duration is limited by the refresh require- ments of the device ( t refc or t refc at ). while in power-down, cke low and a stable clock signal must be maintained at the inputs of the ddr sdram, while all other input signals are ?don?t care.? the power- down state is synchronously exited when cke is registered high (in conjunction with a nop or deselect command). a valid executable command may be applied one clock cycle later.
8000 s. federal way, p.o. box 6, boise, id 83707-0006, tel: 208-368-3900 www.micron.com/productsupport customer comment line: 800-932-4992 micron, the m logo, and the micron logo are trademarks of micron technology, inc.all other tradema rks are the property of their respec- tive owners. this data sheet contains minimum and maximum limits specified ov er the power supply and temperat ure range set forth herein. alt hough considered final, these specifications are subject to change, as further product development and data characterization sometime s occur. 256mb: x4, x8, x16 ddr sdram operations pdf: 09005aef80768abb/source: 09005aef82a95a3a micron technology, inc., reserves the right to change products or specifications without notice. ddr_x4x8x16_core2.fm - 256mb ddr: rev. o, core ddr: rev. b 1/09 en 91 ?2003 micron technology, inc. all rights reserved. figure 55: power-down mode notes: 1. once initialized, v ref must always be powered within the specified range. 2. if this command is a precharge (or if the de vice is already in the idle state), then the power-down mode shown is precharge power-down . if this command is an active (or if at least one row is already active ), then the power-down mode shown is active power-down. 3. no column accesses are allowed to be in progress at the time power-down is entered. c k c k# c omman d vali d 2 nop a dd ress c ke dq dm dq s vali d t c k t c h t c l t i s t i s t ih t i s t i s t ih t ih t i s enter 3 power- d own mo d e exit power- d own mo d e t ref c ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) t0 t1 ta0 ta1 ta2 t2 nop don ? t c are ( ) ( ) ( ) ( ) vali d vali d 1

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